DME201020R

Overview

The Panasonic DME201020R is a composite bipolar junction transistor array housed in a Mini5-G3-B surface-mount package. It integrates one NPN and one PNP transistor configured as an emitter-coupled pair. The device supports a maximum collector-emitter voltage of 60V and a continuous collector current of 500mA. Key electrical characteristics include a DC current gain (hFE) of 120 at 150mA with 10V Vce, a cutoff current of 100nA, and a maximum power dissipation of 300mW. The unit features gull-wing terminals for reliable surface mounting.

Feature Summary

• Integrates complementary NPN and PNP transistors into a single compact component
• Emitter-coupled configuration suitable for differential signal processing
• Surface-mount design utilizing gull-wing terminals for automated assembly

Applications

• Differential amplifier circuits
• Signal switching applications
• Logic interface stages

Procurement Notes

Verify the specific suffix G3-B against the manufacturer's official datasheet to confirm terminal finish and tape/reel specifications. Ensure the ordering part number matches the exact variant required for your PCB footprint. Cross-reference the AEC-Q200 qualification status if automotive reliability standards are mandatory for your specific application environment.

Selection Notes

Select this component when space constraints require a matched NPN/PNP pair in a low-profile surface-mount form factor. The 60V rating and 500mA current capacity suit general-purpose logic and signal conditioning tasks. Consider the 300mW power dissipation limit during thermal analysis to ensure operation within safe junction temperature ranges under load conditions.

Part Context

This device belongs to Panasonic Electronic Components' discrete semiconductor portfolio, specifically designed for compact electronic assemblies. The Mini5-G3-B package represents a small-outline transistor format optimized for high-density printed circuit board layouts. It serves as a solution for designers needing paired transistor functionality without the board space penalty of discrete components.

Replacement Considerations

• DTC143ZT

FAQ

What is the internal configuration of the DME201020R?

The device contains one NPN and one PNP transistor arranged in an emitter-coupled pair configuration.

What is the maximum power dissipation for this component?

The maximum power dissipation is rated at 300mW.