DME20C010R

Overview

The Panasonic DME20C010R is a dual bipolar junction transistor (BJT) array in a Mini5-G3-B package, containing one silicon PNP epitaxial planar transistor (Tr1) and one silicon NPN epitaxial planar transistor (Tr2). It is designed for general amplification applications. The device features a high forward current transfer ratio with excellent linearity and low collector-emitter saturation voltage. Absolute maximum ratings include a collector-base voltage of ±60 V, a collector-emitter voltage of ±50 V, and a continuous collector current of ±100 mA per element. Total power dissipation is rated at 300 mW at 25°C ambient temperature.

Feature Summary

• High forward current transfer ratio (hFE) with excellent linearity
• Low collector-emitter saturation voltage (VCE(sat))
• Halogen-free and RoHS compliant construction

Applications

• General amplification circuits
• Office equipment signal processing
• Communications equipment interfaces
• Household appliance control systems

Procurement Notes

Verify the specific ordering suffix against official Panasonic documentation to confirm packaging details. The standard reel quantity is 3,000 pieces using embossed type thermo-compression sealing. Ensure compliance with the manufacturer's terms regarding special applications such as automotive or medical use before procurement.

Selection Notes

Select this component when a complementary PNP/NPN pair is required in a compact surface-mount form factor. The Mini5-G3-B package supports downsizing compared to larger outlines. Verify that the operating ambient temperature range of -40°C to +85°C meets the system requirements and that the total power dissipation limits are respected under thermal constraints.

Part Context

This part belongs to the DME20C01 series manufactured by Panasonic Electronic Components. It serves as a complementary pair solution, often replacing discrete single transistors to save board space. The marking symbol for identification on the package is A4. It is distinct from pre-biased resistor-equipped arrays.

Replacement Considerations

The datasheet identifies the basic part number equivalent as DSA2001 combined with DSC2001 when configured with base-emitter connection. Designers should verify pinout compatibility and electrical characteristics match before substituting other generic complementary pairs.

FAQ

What is the transition frequency (fT) of the DME20C010R?

The transition frequency is typically 150 MHz for both the PNP (Tr1) and NPN (Tr2) elements when measured at VCE = ±10 V and IC = ±2 mA.

How is the DME20C010R packaged?

It is supplied in an embossed type with thermo-compression sealing, typically containing 3,000 pieces per standard reel.

What are the absolute maximum ratings for collector current?

The continuous collector current (IC) is rated at ±100 mA, while the peak collector current (ICP) is rated at ±200 mA for each transistor element.