RF Diode DME2851-000 product image

DME2851-000

$7.99
  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DME

SKU:c54304e46f8e Category: Brand:

  
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DME2851-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 75MW. Review the specifications below when checking this part for your BOM.

RF Diode specifications for DME2851-000

  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DME
  • Mfr:Skyworks Solutions Inc.
  • Package:Tray
  • Diode Type:Schottky - 1 Bridge
  • Voltage - Peak Reverse (Max):-
  • Current - Max:100 mA
  • Capacitance @ Vr, F:-
  • Resistance @ If, F:-
  • Power Dissipation (Max):75 mW
  • Operating Temperature:-65°C ~ 175°C (TA)
  • Package / Case:4-SMD, Flat Leads
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for DME2851-000

DME2851-000

RF Diode Overview

The DME2851-000 is a beam-lead silicon Schottky barrier mixer diode from the Skyworks DMJ series, configured as a bridge quad. It operates in the K and Ka frequency bands (26.5 to 40.0 GHz). The device features a maximum junction capacitance of 0.1 pF at 0 V and 1 MHz, with a typical series resistance of 18 Ω at 5 mA. Electrical specifications include a breakdown voltage of 3 V at 10 μA and a forward voltage range of 375 to 550 mV at 1 mA. It supports continuous wave power dissipation up to 75 mW per junction and functions within an operating temperature range of -65 °C to +175 °C.

RF Diode Feature Summary

  • Beam-lead design reduces bonding challenges associated with low capacitance junctions
  • Statistical process control wafer fabrication ensures uniformity and close impedance control
  • Low parasitics suitable for balanced mixer applications

RF Diode Applications

  • Microwave Integrated Circuits (MICs)
  • Mixers
  • Detectors

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm package type and electrical tolerances. Confirm RoHS compliance status directly with the supplier or official datasheet before procurement. Ensure ESD precautions are strictly followed during handling due to device sensitivity.

RF Diode Selection Notes

Select this component for high-frequency applications requiring operation through the Ka-band. The medium drive level characteristics make it appropriate for local oscillator drive levels that balance performance and distortion. Verify that the required bridge quad configuration aligns with the circuit topology.

RF Diode Part Context

This part belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. These devices are categorized by universal mixer applications across six frequency ranges: S, C, X, Ku, K, and Ka bands. They are designed for use in microwave integrated circuits where low noise and low intermodulation distortion are critical.

RF Diode Replacement Considerations

Consult the official datasheet for alternative part numbers within the same series that match the required frequency band and drive level. Ensure any substitute maintains the beam-lead package style and compatible electrical parameters such as capacitance and series resistance.

DME2851-000DME2851-000
$7.99
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