RF Diode DME2859-000 product image

DME2859-000

$7.99
  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DME

SKU:252a085d8f85 Category: Brand:

  
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DME2859-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 75MW. Review the specifications below when checking this part for your BOM.

RF Diode specifications for DME2859-000

  • Description:RF DIODE SCHOTTKY 75MW
  • Series:DME
  • Mfr:Skyworks Solutions Inc.
  • Package:Tray
  • Diode Type:Schottky - Ring
  • Voltage - Peak Reverse (Max):-
  • Current - Max:100 mA
  • Capacitance @ Vr, F:-
  • Resistance @ If, F:-
  • Power Dissipation (Max):75 mW
  • Operating Temperature:-65°C ~ 175°C (TA)
  • Package / Case:4-SMD, Flat Leads
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for DME2859-000

DME2859-000

RF Diode Overview

The DME2859-000 is a beam-lead silicon Schottky barrier mixer diode from the Skyworks DMJ series, configured as a ring quad. It operates in the Ku band (12.4 to 18.0 GHz) and features medium drive characteristics. Key electrical specifications include a maximum junction capacitance of 0.05 to 0.15 pF at 0 V, 1 MHz, and a series resistance of 13 Ω at 5 mA. The device has a breakdown voltage of 3 V at 10 μA and a forward voltage range of 350 to 450 mV at 1 mA. It utilizes outline drawing 488-002 and supports continuous wave power dissipation up to 75 mW per junction.

RF Diode Feature Summary

  • Beam-lead design reduces bonding challenges associated with low capacitance junctions
  • Statistical process control wafer fabrication ensures uniformity
  • Low intermodulation distortion performance
  • Low 1/f noise characteristics

RF Diode Applications

  • Microwave Integrated Circuits (MICs)
  • Balanced mixers
  • Detectors
  • Modulators
  • High-speed switches

RF Diode Procurement Notes

Verify component authenticity by cross-referencing the datasheet document number 200725D and manufacturer details. Confirm that the specific part number matches the Ku-band ring quad configuration. Ensure handling procedures account for electrostatic discharge sensitivity, as these devices require protection from static charges during storage and installation.

RF Diode Selection Notes

Select this component when designing Ku-band microwave circuits requiring medium local oscillator drive levels. The beam-lead package facilitates impedance control through narrow capacitance spreads. Verify that the required operating frequency falls within the 12.4 to 18.0 GHz range and that the circuit topology accommodates the four-junction ring configuration.

RF Diode Part Context

This device belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The series covers S, C, X, Ku, K, and Ka bands with varying drive levels. The DME2859-000 specifically represents the medium drive variant within the Ku-band ring quad category, designed for applications demanding low parasitics and high uniformity.

RF Diode Replacement Considerations

Direct substitutes within the same series include other Ku-band ring quad configurations such as DME2857-000 or DME2858-000, depending on the required drive level. Ensure any replacement maintains the beam-lead package type and compatible electrical parameters for the target frequency band.

DME2859-000DME2859-000
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