DMF2835-000

RF Diode Overview

The DMF2835-000 is a beam-lead silicon Schottky mixer diode configured as a series pair. It operates in the S and C frequency bands, covering 2 to 8 GHz. The device features a maximum junction capacitance of 0.50 pF at 0 V and a typical series resistance of 5 Ω at 5 mA. Forward voltage specifications include a breakdown voltage of 2 V at 10 μA and a forward voltage range of 200 to 260 mV at 1 mA. Designed for low drive applications, it utilizes an outline drawing designated as 504-012.

RF Diode Feature Summary

• Beam-lead design reduces bonding challenges associated with small junction areas characteristic of low capacitance microwave devices.
• Statistical process control wafer fabrication ensures uniformity and close impedance control through narrow spread of capacitance values.
• Low parasitics and uniformity make the device well-suited for balanced mixer configurations.

RF Diode Applications

• Microwave Integrated Circuits (MICs)
• Mixers
• Detectors

RF Diode Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's official datasheet documentation against the physical markings on the received parts. Ensure that handling procedures strictly adhere to industry-standard electrostatic discharge precautions, as these devices are sensitive to static charges. Confirm that the specific ordering suffix matches the required electrical parameters before finalizing procurement orders.

RF Diode Selection Notes

Select this part when designing circuits for S or C band frequencies requiring a low-drive series pair configuration. The DMF designation indicates a low forward voltage suitable for starved local oscillator drive levels. Compare the specified capacitance and series resistance against circuit requirements to ensure proper impedance matching and optimal mixer performance within the intended operating bandwidth.

RF Diode Part Context

This component belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes manufactured by Skyworks Solutions. The series encompasses singles, pairs, common cathodes, anti-parallel pairs, and quads designed for applications up to 40 GHz. The DMF prefix specifically identifies low-drive N-type devices within this comprehensive family of microwave components.

RF Diode Replacement Considerations

DMF2835-000

RF Diode FAQ

What is the maximum operating frequency for the DMF2835-000?

The DMF2835-000 is designed for operation in the S and C frequency bands, which cover frequencies from 2 GHz to 8 GHz.

How does the beam-lead design benefit this mixer diode?

The beam-lead design eliminates bonding problems to very small junction areas, which is characteristic of low capacitance junctions found in microwave devices.

What is the typical series resistance value for this device?

The typical series resistance is 5 Ω, measured at a current of 5 mA.