Single FETs, MOSFETs DMG1012T-13 product image

DMG1012T-13

$0.20
  • Description:MOSFET N-CH 20V 630MA SOT523 T&R
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:ddf328287f8f Category: Brand:

  
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DMG1012T-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 630MA SOT523 T&R. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG1012T-13

  • Description:MOSFET N-CH 20V 630MA SOT523 T&R
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:630mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:400mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.74 nC @ 4.5 V
  • Vgs (Max):±6V
  • Input Capacitance (Ciss) (Max) @ Vds:60.67 pF @ 16 V
  • FET Feature:-
  • Power Dissipation (Max):280mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-523
  • Package / Case:SOT-523

Single FETs, MOSFETs datasheet and documents for DMG1012T-13

DMG1012T-13

Single FETs, MOSFETs Overview

The DMG1012T-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT523 surface-mount package and operates with a drain-source voltage of 20 V and a continuous drain current of 630 mA at 25°C. The device exhibits low on-resistance, reaching a maximum of 400 mΩ at 4.5 V gate drive. Electrical characteristics include a gate threshold voltage of 1.0 V max and input capacitance of 60.67 pF. Thermal performance supports a total power dissipation of 280 mW and junction temperatures up to 150°C.

Single FETs, MOSFETs Feature Summary

  • N-channel enhancement mode architecture for efficient switching
  • Low on-resistance and gate threshold voltage for improved efficiency
  • ESD protection rated up to 2 kV
  • Totally lead-free and fully RoHS compliant construction

Single FETs, MOSFETs Applications

  • Automotive applications requiring specific change control
  • Battery management systems
  • Power switch circuits
  • Load switches in portable devices

Single FETs, MOSFETs Procurement Notes

Verify the ordering suffix matches the required packaging configuration. Confirm that the component meets AEC-Q101 qualification standards if automotive usage is intended. Ensure the selected variant aligns with IATF 16949 manufacturing requirements for quality assurance. Cross-reference datasheet specifications against system constraints before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component based on its 20 V drain-source voltage rating and 630 mA continuous current capability. Evaluate thermal resistance parameters to ensure adequate heat dissipation within the SOT523 package. Consider the low gate charge and fast switching speed for high-frequency applications. Verify compatibility with available gate drive voltages to maintain optimal on-resistance performance.

Single FETs, MOSFETs Part Context

This part belongs to the DMG1012 series of N-channel MOSFETs from Diodes Incorporated. It shares core electrical characteristics with other variants in the family but differs in packaging and qualification levels. The DMG1012TQ serves as the automotive-grade equivalent with AEC-Q101 certification. Standard commercial versions may lack the specific automotive change control requirements.

Single FETs, MOSFETs Replacement Considerations

The datasheet explicitly recommends using the DMN2710UTQ as a replacement for new designs. Verify pinout compatibility and electrical parameter alignment when substituting other N-channel MOSFETs in the SOT523 package.

DMG1012T-13DMG1012T-13
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