DMG1016V-7

Overview

The DMG1016V-7 is a complementary pair enhancement mode MOSFET manufactured by Diodes Incorporated. It integrates an N-channel and a P-channel device within a single SOT-563 surface mount package. The N-channel transistor supports a drain-source voltage of 20 V with a continuous drain current of 870 mA at 25°C, while the P-channel counterpart handles -20 V and -640 mA under identical conditions. Both transistors exhibit low on-resistance, with maximum values of 0.5 Ω for the N-channel and 1.0 Ω for the P-channel at a gate-source voltage of 4.5 V. The component operates across a temperature range of -55°C to +150°C and features ESD protection up to 2.5 kV HBM.

Feature Summary

• Complementary N-channel and P-channel configuration in a single ultra-small surface mount package
• Low gate threshold voltage below 1 V for efficient logic-level driving
• Fast switching speed supported by low input capacitance and total gate charge
• Qualified to AEC-Q101 standards for high reliability applications

Applications

• High efficiency power management circuits
• Battery-powered portable devices requiring compact footprint solutions
• DC-DC converter synchronous rectification stages

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The standard designation indicates tape and reel packaging containing 3000 units per reel. Confirm that the required moisture sensitivity level and terminal finish meet the assembly specifications for the intended manufacturing process before placing orders.

Selection Notes

Select this component when a dual complementary MOSFET solution is required in a minimal footprint. Ensure the design accommodates the thermal resistance characteristics, as power dissipation capabilities are dependent on PCB mounting conditions. Verify that the gate drive voltage aligns with the specified thresholds to achieve optimal on-resistance performance during operation.

Part Context

This part belongs to the DMG1016 series of complementary MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. The DMG1016V-7 variant specifically utilizes the SOT-563 case style, distinguishing it from other package options available within the broader product family.

Replacement Considerations

Direct replacements must match the SOT-563 package dimensions and electrical ratings. Verify compatibility regarding gate threshold voltage and on-resistance values to ensure equivalent circuit performance without redesigning the surrounding driver components.