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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.41A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：410mA
- Rds On (Max) @ Id, Vgs：1.8Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：32pF @ 25V
- Power - Max：580mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMG1026UV-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 440mA at +25°C. The device offers a low on-state resistance of 1.8Ω at VGS=10V and 2.1Ω at VGS=4.5V. Packaged in an SOT563 surface-mount format, it supports a power dissipation of 0.58W and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- Low input/output leakage characteristics
- ESD protection rated up to 2kV
Applications
- Battery operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
- DC-DC converters
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the Tape & Reel packaging configuration containing 3,000 units per carrier. Confirm that the component meets RoHS compliance standards and is halogen-free. Ensure the design accommodates the SOT563 package dimensions and thermal requirements specified in the datasheet.
Selection Notes
Select this component when a dual N-channel configuration is required in a compact SOT563 footprint. Evaluate the 60V breakdown voltage against the circuit's maximum operating voltage. Consider the 1.8Ω on-resistance at VGS=10V or 2.1Ω at VGS=4.5V based on the available gate drive voltage to ensure adequate current handling capabilities.
Part Context
This part belongs to the DMG1026UV series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The 'DMG1026UVQ' variant exists as an automotive-compliant alternative qualified to AEC-Q101 standards.
Replacement Considerations
The DMG1026UVQ-7 serves as an automotive-compliant substitute. Verify pinout compatibility and electrical parameter alignment before substitution. Check if the application requires AEC-Q101 qualification, which distinguishes the Q-series from the standard industrial UV-series.
FAQ
What is the ESD protection rating for the DMG1026UV-7?
The device includes integrated gate protection diodes and is ESD protected up to 2kV.
Is there an automotive-grade version of this component?
Yes, the DMG1026UVQ is an automotive-compliant part qualified to AEC-Q101 standards for high reliability.
What is the maximum junction temperature for operation?
The operating and storage temperature range extends up to a maximum of +150°C.
