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DMG2302UKQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 2.8A SOT23 T&R 3. Review the specifications below when checking this part for your BOM.
The DMG2302UKQ-7 is an N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage of 20V and continuous drain currents ranging from 2.2A to 2.8A depending on thermal conditions. The device exhibits low on-resistance, specified as 90mΩ at VGS=4.5V and 120mΩ at VGS=2.5V. It operates within a temperature range of -55°C to +150°C and is housed in a SOT-23 package.
Verify the specific suffix 'Q' indicates AEC-Q101 qualification and PPAP capability compared to standard variants. Confirm the tape and reel packaging quantity matches project requirements. Ensure component authenticity through authorized distribution channels to maintain automotive grade integrity.
Select this component for automotive circuits requiring robust N-channel switching with low on-resistance. Evaluate thermal dissipation capabilities against PCB copper coverage constraints. Consider gate threshold voltage characteristics for compatibility with system logic levels.
This part belongs to the DMG2302UKQ series manufactured by Diodes Incorporated. It is specifically engineered to meet stringent automotive industry standards. The device utilizes silicon technology and is packaged in a surface-mount SOT-23 case for compact integration.
DMG2302UK-7
The maximum gate-source voltage (VGSS) is rated at ±12V.
Yes, it is qualified to AEC-Q101 standards and supports PPAP documentation.
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