Single FETs, MOSFETs DMG2307LQ-7 product image

DMG2307LQ-7

$0.43
  • Description:MOSFET BVDSS: 25V~30V SOT23 T&R
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:182a7bb4d732 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

DMG2307LQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 25V~30V SOT23 T&R. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG2307LQ-7

  • Description:MOSFET BVDSS: 25V~30V SOT23 T&R
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:90mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8.2 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:371.3 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):760mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMG2307LQ-7

DMG2307LQ-7

Single FETs, MOSFETs Overview

The DMG2307LQ-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of -30 V and a maximum continuous drain current (I_D) of -3.8 A at +25°C. The device offers a low on-state resistance (R_DS(ON)) of 90 mΩ at V_GS = -10 V and 134 mΩ at V_GS = -4.5 V. Total gate charge (Q_g) is 8.2 nC at V_GS = -10 V. Operating temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Designed for high efficiency power management applications with minimized on-state resistance.
  • Suitable for automotive applications requiring specific change control, qualified to AEC-Q101 standards.
  • Totally lead-free and fully RoHS compliant, halogen and antimony free.

Single FETs, MOSFETs Applications

  • General purpose interfacing switches
  • Power management functions
  • Load switch for portable devices

Single FETs, MOSFETs Procurement Notes

Verify the component matches the exact part number DMG2307LQ-7. Confirm that the package type is SOT23 and the packing quantity is 3,000 units per tape and reel. Ensure the supplier provides documentation confirming AEC-Q101 qualification if automotive use is intended. Check for compliance with RoHS directives.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel MOSFET with a -30 V rating and low R_DS(ON) is required. Consider the -3.8 A continuous drain current capability at +25°C. Evaluate thermal performance based on the junction-to-ambient thermal resistance of 159 °C/W in minimum pad layouts. Verify gate drive voltage compatibility with the specified threshold and on-resistance characteristics.

Single FETs, MOSFETs Part Context

This component belongs to the DMG2307LQ series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is designed to provide superior switching performance alongside low on-state resistance. The product is housed in an SOT23 package and is suitable for surface mount technology applications.

Single FETs, MOSFETs Replacement Considerations

The datasheet explicitly states that the DMG2307LQ is not recommended for new designs and recommends using DMP3165LQ as an alternative.

Single FETs, MOSFETs FAQ

Is the DMG2307LQ-7 suitable for automotive applications?

Yes, the DMG2307LQ is suitable for automotive applications requiring specific change control. It is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.

What is the maximum drain-source voltage for this MOSFET?

The maximum drain-source voltage (V_DSS) for the DMG2307LQ-7 is -30 V.

DMG2307LQ-7DMG2307LQ-7
$0.43
Buy Now