DMG301NU-13

$0.17

Description：MOSFET N-CH 25V 260MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e26c6447a7d6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMG301NU-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 25V 260MA SOT23. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG301NU-13

Description：MOSFET N-CH 25V 260MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.7V, 4.5V
Rds On (Max) @ Id, Vgs：4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.36 nC @ 4.5 V
Vgs (Max)：8V
Input Capacitance (Ciss) (Max) @ Vds：27.9 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：320mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMG301NU-13

DMG301NU-13

Single FETs, MOSFETs Overview

The DMG301NU-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 25V and a gate-source voltage (VGS) rating of 8V. The device provides a continuous drain current (ID) of 0.26A at VGS = 4.5V and 0.23A at VGS = 2.7V, both measured at +25°C ambient temperature. The static drain-source on-resistance (RDS(ON)) is specified as 4Ω at VGS = 4.5V with an ID of 0.4A, and 5Ω at VGS = 2.7V with an ID of 0.2A. Total power dissipation (PD) is rated at 0.32W. The component operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low on-state resistance for high efficiency power management
Fast switching speed with low input capacitance
ESD protected gate exceeding 6kV Human Body Model rating
Totally lead-free and fully RoHS compliant

Single FETs, MOSFETs Applications

DC-DC Converters
Power Management Functions
Battery Operated Systems
Solid-State Relays
Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and compliance status. Confirm that the requested part number matches the exact electrical specifications required for the target application. Ensure compatibility with surface mount assembly processes and verify moisture sensitivity level requirements before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a small surface mount package with low on-resistance and fast switching performance. Consider the 25V drain-source voltage limit and the 0.26A continuous current capability when designing circuits. Evaluate thermal resistance characteristics and ensure adequate heat dissipation for the intended operating environment.

Single FETs, MOSFETs Part Context

This component belongs to the DMG301 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a SOT-23 case. The device is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for high-efficiency power management applications.

Single FETs, MOSFETs Replacement Considerations

The datasheet does not list specific substitute part numbers. Verify pinout compatibility and electrical parameters such as VDS, ID, and RDS(ON) when evaluating alternative components from other manufacturers or different product lines.