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DMG302PU-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET P-CH 25V 170MA SOT23. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG302PU-13
- Description：MOSFET P-CH 25V 170MA SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.7V, 4.5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 4.5 V
- Vgs (Max)：-8V
- Input Capacitance (Ciss) (Max) @ Vds：27.2 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：320mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMG302PU-13
Single FETs, MOSFETs Overview
The DMG302PU-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -25V drain-source breakdown voltage and operates in an SOT-23 surface-mount package. The device provides a continuous drain current of -0.17A at +25°C with a gate-source voltage of -4.5V, or -0.15A at -2.7V. Static on-resistance is specified as 10Ω max at VGS=-4.5V and 13Ω max at VGS=-2.7V. Total gate charge is typically 0.35nC, supporting fast switching speeds.
Single FETs, MOSFETs Feature Summary
- Low on-state resistance for high efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate exceeding 6kV human body model rating
- Totally lead-free and fully RoHS compliant
Single FETs, MOSFETs Applications
- DC-DC Converters
- Power Management Functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' to confirm the 10,000-unit tape and reel packaging configuration. Ensure the component meets AEC-Q101 standards if automotive reliability requirements are necessary. Confirm that the SOT-23 package dimensions align with the target PCB footprint layout before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a small surface-mount package with low gate threshold voltage. The device is suitable for battery-powered systems due to its low static drain current. Consider the thermal resistance characteristics when designing heat dissipation strategies for steady-state operation.
Single FETs, MOSFETs Part Context
This part belongs to the DMG series of P-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a standard SOT-23 case. The product is designed to minimize on-state resistance while maintaining superior switching performance for efficient power management.
Single FETs, MOSFETs Replacement Considerations
Check datasheets for alternative P-channel MOSFETs in SOT-23 packages with similar -25V ratings and comparable on-resistance values. Verify pinout compatibility and thermal characteristics before substituting.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
