SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
DMG3402LQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 4A SOT23. Review the specifications below when checking this part for your BOM.
The DMG3402LQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 4A at +25°C. The device offers low on-resistance, specified as 52mΩ at VGS=10V/ID=4A, 65mΩ at VGS=4.5V/ID=3A, and 85mΩ at VGS=2.5V/ID=2A. Total gate charge (Qg) is 11.7nC at VGS=10V. It operates within a junction temperature range of -55°C to +150°C and is housed in an SOT-23 surface-mount package.
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets the required automotive qualification standards if intended for such applications. Ensure the selected variant aligns with the necessary thermal and electrical specifications for the target circuit design.
Select this component for applications requiring a compact N-channel MOSFET with low on-resistance and fast switching capabilities. Consider the 30V breakdown voltage and 4A current rating when designing power stages. Verify compatibility with the SOT-23 footprint and ensure adequate thermal management for the specified power dissipation limits.
This part belongs to the DMG3402LQ series of N-channel enhancement mode field effect transistors from Diodes Incorporated. It is designed for general-purpose switching applications in portable and battery-operated devices. The series emphasizes low input capacitance and fast switching speeds to improve efficiency in power management circuits.
Check datasheets for alternative N-channel MOSFETs with similar 30V BVDSS and RDS(ON) characteristics. Verify pinout compatibility with the SOT-23 package before substitution.
Yes, the device is qualified to AEC-Q101 standards and is PPAP capable.
The maximum operating junction temperature is +150°C.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.