DMG3414UQ-7

$0.48

Description：MOSFET N-CH 20V 4.2A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2d9119abddd0 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

DMG3414UQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 4.2A SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG3414UQ-7

Description：MOSFET N-CH 20V 4.2A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：25mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.6 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：829.9 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：780mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMG3414UQ-7

DMG3414UQ-7

Single FETs, MOSFETs Overview

The DMG3414UQ-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 20 V and a continuous drain current (I_D) of 4.2 A at +25°C. The device offers a maximum on-resistance (R_DS(ON)) of 25 mΩ at V_GS = 4.5 V, 29 mΩ at V_GS = 2.5 V, and 37 mΩ at V_GS = 1.8 V. Key electrical parameters include a gate threshold voltage (V_GS(TH)) range of 0.5 V to 0.9 V, total gate charge (Q_g) of 9.6 nC, and power dissipation (P_D) of 0.78 W. It operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed for high-efficiency power-management applications with minimized on-state resistance.
AEC-Q101 qualified and PPAP capable for automotive applications requiring specific change control.
Totally lead-free, fully RoHS compliant, and halogen/antimony free.
Provides superior switching performance alongside low input/output leakage.

Single FETs, MOSFETs Applications

Power-management functions
DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the suffix '-7' to confirm the 3,000-unit tape and reel packaging configuration. Ensure that the procurement specifications align with the AEC-Q101 qualification requirements if the application demands automotive-grade components. Confirm compliance with IATF 16949 manufacturing standards as stated in the official documentation.

Single FETs, MOSFETs Selection Notes

Select this component when a 20 V N-channel MOSFET with low R_DS(ON) is required for compact SOT-23 designs. Consider the thermal resistance of 162 °C/W and the 0.78 W power dissipation limit for heat management. Evaluate the gate charge and switching times against the specific frequency requirements of the target DC-DC converter or power management circuit.

Single FETs, MOSFETs Part Context

This component belongs to the DMG3414U series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a surface-mount SOT-23 package. The device is designed to balance low on-resistance with fast switching capabilities, targeting efficiency improvements in portable and automotive electronic systems.

Single FETs, MOSFETs Replacement Considerations

The datasheet does not list specific substitute part numbers. Verify pinout compatibility and electrical parameter margins before considering alternative manufacturers. Cross-reference with other DMG3414 variants only if package and qualification requirements match exactly.

Single FETs, MOSFETs FAQ

Is the DMG3414UQ-7 suitable for automotive applications?

Yes, the DMG3414UQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.