DMG3415UFY4Q-7

$0.54

Description：MOSFET P-CH 16V 2.5A X2-DFN2015
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d96512099c44 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMG3415UFY4Q-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET P-CH 16V 2.5A X2-DFN2015. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG3415UFY4Q-7

Description：MOSFET P-CH 16V 2.5A X2-DFN2015
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：16 V
Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：39mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：282 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：650mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN2015-3
Package / Case：3-XDFN

Single FETs, MOSFETs datasheet and documents for DMG3415UFY4Q-7

DMG3415UFY4Q-7

Single FETs, MOSFETs Overview

The DMG3415UFY4Q is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of -16 V and operates within an ambient temperature range of -55°C to +150°C. The device provides a maximum continuous drain current (ID) of -2.5 A at TA = +25°C. Static drain-source on-resistance (RDS(ON)) values are specified as 39 mΩ max at VGS = -4.5V, 52 mΩ max at VGS = -2.5V, and 65 mΩ max at VGS = -1.8V. Total gate charge (Qg) is typically 10 nC.

Single FETs, MOSFETs Feature Summary

Qualified to AEC-Q101 standards for high reliability in automotive applications
ESD protected up to 3kV with low input/output leakage characteristics
Totally lead-free and fully RoHS compliant construction

Single FETs, MOSFETs Applications

Backlighting circuits
Power management functions
DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000 units per tape and reel packaging configuration. Confirm that the X2-DFN2015-3 case material utilizes the specified green molding compound and verify compliance with UL flammability classification rating 94V-0 requirements for your application.

Single FETs, MOSFETs Selection Notes

Select this component when a compact surface-mount solution is required for high-efficiency power management. The X2-DFN2015-3 package offers a small footprint suitable for space-constrained designs. Ensure the gate drive voltage meets the minimum threshold requirements for optimal RDS(ON) performance across the intended operating temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the DMG series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product is specifically engineered for applications demanding high efficiency and reliable operation in power management systems.

Single FETs, MOSFETs Replacement Considerations

Consult official documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter alignment before substitution.