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DMG3418L-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 4A SOT23. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG3418L-13
- Description：MOSFET N-CH 30V 4A SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：60mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：464.3 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMG3418L-13
Single FETs, MOSFETs Overview
The DMG3418L-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 4A at +25°C. The device offers a low on-state resistance, specified as 60mΩ max at VGS=10V and 70mΩ max at VGS=4.5V. Packaged in a standard SOT-23 case with three terminals, it supports surface mount installation. Total power dissipation is rated at 1.4W at +25°C. Operating temperature ranges from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Totally lead-free and fully RoHS compliant, ensuring compliance with environmental directives.
- Manufactured using halogen and antimony-free green materials.
Single FETs, MOSFETs Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
- Motor Control
Single FETs, MOSFETs Procurement Notes
Verify the ordering suffix '-13' corresponds to the specific tape and reel packaging quantity defined in official documentation. Confirm that the component meets all applicable automotive or industrial qualification standards required for the target application before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a compact N-channel MOSFET with low on-resistance is required for efficient power switching. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Verify thermal management capabilities are sufficient for the expected power dissipation levels within the operating temperature range.
Single FETs, MOSFETs Part Context
This part belongs to the DMG3418L series of N-channel enhancement mode MOSFETs. It is designed for general-purpose switching applications requiring low conduction losses. The series utilizes advanced silicon technology to achieve high performance in a small surface-mount package suitable for automated assembly processes.
Single FETs, MOSFETs Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers without verifying pinout, electrical ratings, and package dimensions against the original datasheet specifications.
Single FETs, MOSFETs FAQ
What is the maximum pulsed drain current for the DMG3418L-13?
The maximum pulsed drain current (IDM) is 15A, limited by the junction temperature.
Is the DMG3418L-13 suitable for automotive applications?
For automotive applications requiring specific change control, parts qualified to AEC-Q100/101/200 and PPAP capable, contact Diodes Incorporated directly.
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