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DMG4800LFG-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 7.44A 8DFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMG4800LFG-7
- Description：MOSFET N-CH 30V 7.44A 8DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：7.44A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：17mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.47 nC @ 5 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：798 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：940mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN3030-8
- Package / Case：8-PowerUDFN
Single FETs, MOSFETs datasheet and documents for DMG4800LFG-7
Single FETs, MOSFETs Overview
The DMG4800LFG-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an 8-pin DFN3030-8 surface-mount package. It features a drain-source voltage (VDSS) of 30V and a gate-source voltage (VGSS) rating of ±25V. The device supports a steady-state drain current of 7.44A at 25°C and a pulsed current of 40A. Static drain-source on-resistance (RDS(ON)) ranges from 11mΩ to 24mΩ depending on gate drive conditions. Total power dissipation is rated at 0.94W with a thermal resistance of 133°C/W. Operating temperature spans -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Dual isolated N-channel configuration within a compact DFN3030-8 package
- Low on-resistance and low input capacitance for efficient switching
- Qualified to AEC-Q101 standards for automotive reliability
- Lead-free design compliant with RoHS directives
Single FETs, MOSFETs Applications
- Automotive electronic control units
- Power distribution circuits
- Load switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging format containing 3000 units per reel. Confirm that the component meets UL 94V-0 flammability ratings and J-STD-020 moisture sensitivity level requirements for your assembly process. Ensure compatibility with NiPdAu terminal finishes over copper lead frames.
Single FETs, MOSFETs Selection Notes
Select this component when a dual isolated N-channel MOSFET is required in a small footprint. The 30V rating suits low-voltage DC systems. Consider the 133°C/W thermal resistance for heat dissipation capabilities. Verify that the 7.44A continuous current rating aligns with peak load demands without exceeding junction temperature limits.
Single FETs, MOSFETs Part Context
This part belongs to the DMG4800 series of dual N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed for surface mount applications. The DFN3030-8 case provides a thermally efficient solution compared to traditional plastic packages while maintaining electrical isolation between channels.
Single FETs, MOSFETs Replacement Considerations
Consult official Diodes Incorporated documentation for verified cross-reference part numbers. Do not substitute based solely on pinout or generic specifications without confirming electrical parameter equivalence.
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