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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 10A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Rds On (Max) @ Id, Vgs：21mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：478.9pF @ 16V
- Power - Max：1.42W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMG4822SSDQ-13 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage (BVDSS) of 30 V and a continuous drain current (ID) of 10 A at +25°C. The device offers a typical static drain-source on-resistance (RDS(ON)) of 21 mΩ at VGS = 10V and ID = 8.5A, with a maximum gate threshold voltage of 3 V. Total gate charge is typically 10.5 nC at VGS = 10V. It operates within a junction temperature range of -55°C to +150°C and is housed in an SO-8 package.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Low on-resistance and low input capacitance for efficient switching
- Fast switching speed with low input/output leakage currents
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- General purpose interfacing switches
- Power management functions
- DC-DC converters
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as defined in the official datasheet. Confirm that the component meets the required IATF 16949 manufacturing facility standards if strict automotive change control protocols are necessary for the target application.
Selection Notes
Select this component when a dual N-channel configuration is required within a compact SO-8 footprint. Ensure the design accommodates the 30 V drain-source voltage limit and the 10 A continuous current rating at +25°C ambient temperature. Verify that the thermal management strategy supports the specified power dissipation and thermal resistance characteristics under expected operating conditions.
Part Context
This part belongs to Diodes Incorporated's DMG series of dual N-channel enhancement mode MOSFETs. It is specifically engineered to meet stringent automotive reliability requirements. The device integrates two independent N-channel MOSFETs into a single surface-mount package, providing a space-efficient solution for high-density circuit designs.
Replacement Considerations
The datasheet explicitly recommends using the DMT3020LSDQ as a replacement for new designs. Engineers should evaluate the electrical parameters and pinout compatibility of the DMT3020LSDQ before substituting the DMG4822SSDQ-13 in existing circuits.
