DMG4N60SJ3

$0.37

Description：MOSFET N-CH 600V 3A TO251
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:a475695a7381 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

DMG4N60SJ3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 600V 3A TO251. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG4N60SJ3

Description：MOSFET N-CH 600V 3A TO251
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.3 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：532 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：41W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-251
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for DMG4N60SJ3

DMG4N60SJ3

Single FETs, MOSFETs Overview

The DMG4N60SJ3 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 600V and a maximum on-resistance (RDS(ON)) of 2.5Ω at VGS = 10V. The device supports a continuous drain current of 3.0A at TC = +25°C and operates within a junction temperature range of -55°C to +150°C. It utilizes a TO-251 package.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Features a high BVDSS rating suitable for demanding power applications.
Constructed with low input capacitance characteristics.

Single FETs, MOSFETs Applications

Motor Control
Backlighting
DC-DC Converters
Power Management Functions

Single FETs, MOSFETs Procurement Notes

Verify the component status before procurement, as the datasheet explicitly marks this part as not recommended for new designs. Confirm that the specific ordering suffix matches the required packaging type, such as standard TO251 or Type TH, to ensure compatibility with existing board layouts and assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring high-voltage handling up to 600V. Evaluate thermal dissipation requirements carefully, as the total power dissipation drops significantly at elevated case temperatures. Ensure gate drive voltages align with the specified threshold and on-resistance test conditions to achieve optimal performance.

Single FETs, MOSFETs Part Context

This MOSFET belongs to a generation designed to balance low on-resistance with fast switching capabilities. It is intended for use in power management systems where efficiency and voltage tolerance are critical. The device is housed in a TO-251 surface-mount package.