DMG5802LFX-7

$0.85

Description：MOSFET 2N-CH 24V 6.5A 6DFN
Series：-

SKU:f3ee346e964a Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 24V 6.5A 6DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：24V
Current - Continuous Drain (Id) @ 25°C：6.5A
Rds On (Max) @ Id, Vgs：15mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：31.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1066.4pF @ 15V
Power - Max：980mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-VFDFN Exposed Pad
Supplier Device Package：W-DFN5020-6
Grade：-
Qualification：-

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DMG5802LFX-7

Overview

The DMG5802LFX-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a W-DFN5020-6 surface-mount package with a drain-source voltage (Vdss) of 24V and a continuous drain current (Id) of 6.5A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 15mΩ at Vgs=4.5V and 20mΩ at Vgs=2.5V. Key electrical parameters include a gate threshold voltage (Vgs(th)) ranging from 0.6V to 1.5V, total gate charge (Qg) of 31.3nC at Vgs=10V, and input capacitance (Ciss) of 1066.4pF. Power dissipation is rated at 980mW, with an operating temperature range of -55°C to +150°C.

Feature Summary

Dual N-channel configuration in a compact W-DFN5020-6 package
Optimized for low on-state resistance and superior switching performance
ESD protection rated up to 3kV
Qualified to AEC-Q101 standards for high reliability

Applications

DC-DC converters
Power management functions
Load switches

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS35009 Rev. 5-2. Confirm that the part number matches DMG5802LFX-7 and the package type is W-DFN5020-6. Ensure compliance with RoHS and AEC-Q101 requirements if applicable to your design specifications.

Selection Notes

Select this component for applications requiring a dual N-channel MOSFET with low Rds(on) and fast switching capabilities. Consider the 24V voltage rating and 6.5A current capacity when designing power circuits. Verify thermal management needs given the 980mW power dissipation limit in the small W-DFN5020-6 package.

Part Context

The DMG5802LFX-7 belongs to the DMG5802 series of dual N-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining excellent switching performance. The device is suitable for high-efficiency power management applications where space constraints and thermal efficiency are critical factors.

Replacement Considerations

Check for direct replacements within the DMG5802 series or other dual N-channel MOSFETs with similar Vdss, Id, and Rds(on) ratings. Ensure pinout compatibility and package dimensions match the W-DFN5020-6 form factor before substitution.