DMG6402LDM-7

$0.37

Description：MOSFET N-CH 30V 5.3A SOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8c8b3a163352 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

DMG6402LDM-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 5.3A SOT26. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG6402LDM-7

Description：MOSFET N-CH 30V 5.3A SOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：27mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：404 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.12W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-26
Package / Case：SOT-23-6

Single FETs, MOSFETs datasheet and documents for DMG6402LDM-7

DMG6402LDM-7

Single FETs, MOSFETs Overview

The DMG6402LDM-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT-26 package with a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 5.3 A at 25°C ambient temperature. The device has a maximum power dissipation of 1.12 W and operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a gate threshold voltage (Vgs(th)) of up to 2.0 V at 250µA, an on-resistance (Rds(on)) of 27 mΩ at Vgs=10V and Id=7A, and a total gate charge (Qg) of 9.2 nC at Vgs=10V.

Single FETs, MOSFETs Feature Summary

Low R DS(ON)
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage

Single FETs, MOSFETs Applications

Single FETs, MOSFETs Procurement Notes

Verify the component status before procurement as the datasheet explicitly states this part is not recommended for new design. Confirm that the ordering suffix matches the required tape and reel packaging quantity. Ensure compliance with RoHS standards and check for availability of the recommended replacement model.

Single FETs, MOSFETs Selection Notes

Select this component only if existing designs accommodate its discontinuation status. Evaluate thermal performance against the specified thermal resistance and power dissipation limits. Consider the operating temperature range and package constraints when integrating into the circuit layout.

Single FETs, MOSFETs Part Context

This N-channel MOSFET belongs to the DMG6402 series from Diodes Incorporated. It is designed for general switching applications requiring low on-resistance and fast switching capabilities. The device is qualified to AEC-Q101 standards for high reliability.