DMG7430LFG-7

$0.27

Description：MOSFET N-CH 30V 10.5A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ab72a7d85f18 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMG7430LFG-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 10.5A PWRDI3333. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG7430LFG-7

Description：MOSFET N-CH 30V 10.5A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1281 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for DMG7430LFG-7

DMG7430LFG-7

Single FETs, MOSFETs Overview

The DMG7430LFG-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 30 V and a gate-source voltage (V_GSS) of ±20 V. The device offers a typical static drain-source on-resistance (R_DS(ON)) of 11 mΩ at V_GS = 10 V and 15 mΩ at V_GS = 4.5 V, both measured at I_D = 20 A. Continuous drain current ratings are 10.5 A at T_A = +25°C and 8.5 A at T_A = +70°C. Total gate charge is 26.7 nC at V_GS = 10 V. The component operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low R_DS(ON) minimizes on-state power losses for high-efficiency applications.
PowerDI3333-8 package provides a small form factor with thermal efficiency.
Occupies approximately 33% of the board area compared to SO-8 packages.
RoHS compliant and halogen/antimony free.

Single FETs, MOSFETs Applications

Backlighting
Power-management functions
DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 2000-unit tape and reel packaging configuration. Confirm that the standard DMG7430LFG datasheet applies rather than the automotive-compliant DMG7430LFGQ variant if non-automotive specifications are required. Ensure compatibility with the PowerDI3333-8 footprint during PCB layout.

Single FETs, MOSFETs Selection Notes

Select this component when low on-state resistance is critical for minimizing conduction losses in compact designs. The PowerDI3333-8 package allows for higher density end products compared to traditional surface-mount packages. Verify that the 30 V breakdown voltage meets the system requirements and that the thermal dissipation capabilities align with the expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the DMG7430 series of N-channel enhancement mode MOSFETs. It utilizes silicon technology and is housed in a molded plastic PowerDI3333-8 package with NiPdAu terminal finish over a copper leadframe. The device is designed to balance low on-resistance with superior switching performance.

Single FETs, MOSFETs Replacement Considerations

An automotive-compliant version is available under the separate part number DMG7430LFGQ. Verify if automotive reliability standards are necessary before selecting this alternative.