DMG7N65SCT

Description：MOSFET N-CH 650V 7.7A TO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:522b33cd0c51 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMG7N65SCT is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 650V 7.7A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMG7N65SCT

Description：MOSFET N-CH 650V 7.7A TO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.4Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25.2 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：886 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB (Type TH)
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for DMG7N65SCT

DMG7N65SCT

Single FETs, MOSFETs Overview

The DMG7N65SCT is an N-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. It features a silicon technology construction housed in a TO-220-3 through-hole package. The device supports a drain-source voltage (Vds) of 650 V and a continuous drain current (Id) of 9 A. Key electrical parameters include a gate-source voltage range of -30 V to +30 V, a threshold voltage (Vgs th) of 3 V, and a maximum on-resistance (Rds On) of 1.3 Ohms. The component operates within a temperature range of -55°C to +150°C with a power dissipation rating of 165 W.

Single FETs, MOSFETs Feature Summary

High-voltage capability with 650 V breakdown for robust switching applications
Automotive-grade qualification compliant with AEC-Q101 standards
Through-hole TO-220-3 packaging for efficient thermal management

Single FETs, MOSFETs Applications

Automotive power electronics systems
Industrial motor control circuits
General-purpose high-voltage switching

Single FETs, MOSFETs Procurement Notes

This component is officially classified as End-of-Life and scheduled for obsolescence by the manufacturer. Verification of final availability is required before procurement planning. Distributors may list remaining stock or obsolete inventory, but no new manufacturing is confirmed. Buyers must validate part authenticity and storage conditions carefully due to the discontinued status. Alternative sourcing strategies should be prioritized immediately.

Single FETs, MOSFETs Selection Notes

Select this component only if legacy compatibility with the DMG9N65 series is strictly required. The TO-220-3 package necessitates specific PCB footprint considerations compared to surface-mount alternatives. Designers must account for the 1.3 Ohm on-resistance in thermal calculations. Due to the obsolete lifecycle status, long-term supply chain stability cannot be guaranteed. Evaluate replacement options early in the design phase to mitigate production risks.

Single FETs, MOSFETs Part Context

The DMG7N65SCT belongs to the DMG9N65 family of N-Channel MOSFETs from Diodes Incorporated. This series targets automotive and industrial markets requiring high-voltage performance. The component utilizes standard silicon technology optimized for general switching duties. It shares functional similarities with other devices in the DMG9N65 lineup while offering specific pinout and packaging configurations suitable for through-hole assembly requirements.