ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 450V 0.5A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：450V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Rds On (Max) @ Id, Vgs：4Ohm @ 400mA, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：6.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：256pF @ 25V
- Power - Max：1.64W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The DMGD7N45SSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage (V(BR)DSS) of 450 V and a maximum static drain-source on-resistance (RDS(ON)) of 4 Ω at VGS = 10 V. The device supports a continuous drain current (ID) of 0.85 A at +25°C and a pulsed drain current (IDM) of 2.2 A. Total power dissipation (PD) is rated at 1.64 W, with a thermal resistance junction-to-ambient (RθJA) of 78 °C/W. Operating temperature ranges from -55 °C to +150 °C.
Feature Summary
- High BVDSS rating suitable for demanding power applications
- Low input capacitance and low leakage characteristics
- Qualified to AEC-Q101 standards for high reliability
Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the component against official datasheet DS36011 Rev. 7-2 specifications before integration. Confirm that the SO-8 package dimensions and pinout match your PCB layout requirements. Ensure environmental compliance aligns with project needs, as the device is lead-free, RoHS compliant, and halogen/antimony free. Validate thermal management strategies given the 1.64 W power dissipation limit in steady-state conditions.
Selection Notes
Select this component when high voltage isolation up to 450 V is required in a compact dual configuration. The 4 Ω RDS(ON) makes it appropriate for lower current switching tasks rather than high-power conduction. Consider the 78 °C/W thermal resistance for heat dissipation planning. Verify gate threshold voltage compatibility with your control logic levels, which typically range between 3.5 V and 4.5 V.
Part Context
This part belongs to Diodes Incorporated's dual MOSFET portfolio, designed to save board space compared to discrete single-channel devices. The 'SSD' suffix indicates the SO-8 surface-mount package and specific tape-and-reel packaging format. It serves as a complementary solution for circuits requiring two isolated N-channel switches within a single footprint.
Replacement Considerations
Direct replacements must match the 450 V rating, SO-8 package, and dual N-channel configuration. Verify that any substitute maintains similar RDS(ON) and Qg values to ensure equivalent switching performance and thermal behavior in existing designs.
FAQ
What is the maximum pulsed drain current for the DMGD7N45SSD-13?
The maximum pulsed drain current (IDM) is 2.2 A, measured with a 10 µs pulse duration and a 1% duty cycle.
Is the DMGD7N45SSD-13 suitable for automotive applications?
Yes, the device is qualified to AEC-Q101 standards, indicating its suitability for high-reliability automotive environments.
What is the typical gate charge (Qg) for this MOSFET?
The total gate charge (Qg) is typically 6.9 nC, measured at VDS = 360 V, ID = 0.7 A, and VGS = 10 V.
