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Product Detailed Parameters
- Description：MOSFET 2N/2P-CH 40V 4.5A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N and 2 P-Channel (Full Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta), 3.7A (Ta)
- Rds On (Max) @ Id, Vgs：45mOhm @ 3.9A, 10V, 65mOhm @ 4.2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.5nC @ 10V, 11.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：574pF @ 20V, 587pF @ 20V
- Power - Max：1.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMHC4035LSD-13 is a complementary enhancement mode MOSFET H-Bridge in an SOIC-8 package. It integrates two N-channel and two P-channel devices. The N-channel features a maximum drain-source voltage of 40V, with on-resistance values of 45mΩ at VGS=10V and 58mΩ at VGS=4.5V. The P-channel has a -40V breakdown, with on-resistance of 65mΩ at VGS=-10V and 100mΩ at VGS=-4.5V. Total power dissipation is 1.5W, operating temperature ranges from -55°C to +150°C, and it meets AEC-Q101 standards.
Feature Summary
- Integrates four channels (two N-type, two P-type) within a single surface-mount package
- Optimized for low gate drive requirements while maintaining low on-resistance
- Designed for fast switching speeds and low input capacitance
- Qualified to automotive reliability standards
Applications
- DC Motor Control
- DC-AC Inverters
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS36287 Rev. 1-2. Confirm that the marking code matches C4035LS and the date code format aligns with YYWW specifications. Ensure the device is sourced through authorized channels to guarantee compliance with RoHS directives and AEC-Q101 qualification requirements.
Selection Notes
Select this component when a compact solution for H-bridge topologies is required. The integrated design reduces board space compared to discrete transistors. Verify that the system's gate drive voltage supports the specified RDS(ON) thresholds of 4.5V or 10V to ensure optimal conduction performance.
Part Context
This part belongs to the DMHC series of complementary MOSFETs manufactured by Diodes Incorporated. It utilizes a standard SO-8 case configuration with matte tin terminals over a copper leadframe. The product is classified as a 'Green' device, being halogen and antimony free.
Replacement Considerations
Cross-reference with other Diodes Incorporated DMHC series parts such as DMHC4904LSD for similar voltage ratings. Verify pin compatibility and thermal resistance characteristics before substituting.
