DMJ2667-000

$7.99

Description：RF DIODE SCHOTTKY 75MW
Series：DMJ

SKU:432b70b74b4f Category: RF Diodes Brand: Skyworks Solutions Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

DMJ2667-000 is listed in the RF Diode range at ChipApex. The manufacturer field lists Skyworks Solutions Inc.. Its product description is RF DIODE SCHOTTKY 75MW. Review the specifications below when checking this part for your BOM.

RF Diode specifications for DMJ2667-000

Description：RF DIODE SCHOTTKY 75MW
Series：DMJ
Mfr：Skyworks Solutions Inc.
Package：Tray
Diode Type：Schottky - Ring
Voltage - Peak Reverse (Max)：-
Current - Max：100 mA
Capacitance @ Vr, F：-
Resistance @ If, F：-
Power Dissipation (Max)：75 mW
Operating Temperature：-65°C ~ 175°C (TA)
Package / Case：4-SMD, Flat Leads
Supplier Device Package：-
Grade：-
Qualification：-

RF Diode datasheet and documents for DMJ2667-000

DMJ2667-000

RF Diode Overview

The DMJ2667-000 is a beam-lead silicon Schottky barrier mixer diode quad configured as a ring structure, designed for Ku-band applications from 12.4 to 18.0 GHz. It features high drive characteristics with a maximum junction capacitance of 0.15 pF and a series resistance of 13 Ω at 5 mA. The device has a breakdown voltage of 4 V at 10 μA and a forward voltage range of 500 to 680 mV at 1 mA. It operates within an ambient temperature range of -65°C to +175°C and can dissipate up to 75 mW per junction continuously.

RF Diode Feature Summary

Beam-lead design reduces bonding challenges associated with low capacitance junctions
Statistical process control wafer fabrication ensures uniformity and close impedance control
Low parasitics and low intermodulation distortion suitable for balanced mixers

RF Diode Applications

Microwave Integrated Circuits (MICs)
Ku-band mixers
Detectors
Modulators
High-speed switches

RF Diode Procurement Notes

Verify the specific datasheet revision and package outline drawing number before ordering. Confirm that the Ku-band frequency range aligns with system requirements. Ensure proper electrostatic discharge precautions are implemented during handling due to the sensitivity of the beam-lead structure.

RF Diode Selection Notes

Select this part for Ku-band balanced mixer designs requiring high local oscillator drive levels. Compare the 13 Ω series resistance and 0.15 pF maximum capacitance against other beam-lead options if lower drive or different frequency bands are needed. Verify compatibility with the required mounting substrate and bonding techniques.

RF Diode Part Context

This component belongs to the Skyworks DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. These devices are categorized by universal mixer applications across S, C, X, Ku, K, and Ka bands. The DMJ prefix specifically denotes high drive level devices within the N-type category.