DMJ2832-000

RF Diode Overview

The DMJ2832-000 is a beam-lead silicon Schottky barrier mixer diode configured as a series pair. Designed for Ku-band applications (12.4 to 18.0 GHz), it features high drive characteristics with a maximum junction capacitance of 0.15 pF and a typical series resistance of 13 Ω at 5 mA. The device has a forward voltage range of 500 to 680 mV at 1 mA and operates within an ambient temperature range of -65°C to +175°C.

RF Diode Feature Summary

• Beam-lead design reduces bonding challenges associated with low capacitance junctions
• Statistical process control wafer fabrication ensures uniformity
• Low parasitics suitable for balanced mixer configurations

RF Diode Applications

• Microwave Integrated Circuits (MICs)
• Ku-band mixers
• Detectors
• Modulators
• High-speed switches

RF Diode Procurement Notes

Verify the current lifecycle status before procurement, as this component may be subject to discontinuation or limited availability. Confirm that the Ku-band specifications align precisely with system requirements. Ensure proper electrostatic discharge precautions are implemented during handling due to the sensitivity of the beam-lead structure.

RF Diode Selection Notes

Select this part when Ku-band operation between 12.4 and 18.0 GHz is required. The high drive level makes it appropriate for applications needing higher local oscillator power. Verify compatibility with the 504-012 outline drawing for the series pair configuration. Consider alternative drive levels if lower LO power consumption is necessary.

RF Diode Part Context

This component belongs to the Skyworks DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The series categorizes devices by frequency band and drive level, covering S through Ka bands. The DMJ designation specifically indicates a high-drive N-type device optimized for robust mixer performance in microwave integrated circuits.

RF Diode Replacement Considerations

DMJ2833-000 (K/Ka band series pair)