DMJ70H1D3SJ3

Description：MOSFET N-CH 700V 4.6A TO251
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:ed12ae1e51d1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMJ70H1D3SJ3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 700V 4.6A TO251. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMJ70H1D3SJ3

Description：MOSFET N-CH 700V 4.6A TO251
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：700 V
Current - Continuous Drain (Id) @ 25°C：4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.9 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：351 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：41W (Tc)
Operating Temperature：-55°C ~ 155°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-251
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for DMJ70H1D3SJ3

DMJ70H1D3SJ3

Single FETs, MOSFETs Overview

The DMJ70H1D3SJ3 is a discontinued N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management. It features a 700V drain-source breakdown voltage and a maximum on-resistance of 1.3Ω at VGS=10V. The device supports a continuous drain current of 4.6A at +25°C case temperature and operates within a junction temperature range of -55°C to +150°C. Packaged in a TO-251 (IPak) surface-mount housing with matte tin terminals, it offers low input capacitance and lead-free construction compliant with RoHS directives.

Single FETs, MOSFETs Feature Summary

Optimized for minimizing on-state resistance while maintaining superior switching performance
High breakdown voltage rating suitable for demanding power applications
Low input capacitance for efficient drive requirements
Constructed with halogen- and antimony-free green molding compound

Single FETs, MOSFETs Applications

Motor controls
Backlighting circuits
DC-DC converters
Power management functions

Single FETs, MOSFETs Procurement Notes

This component is officially marked as obsolete and discontinued by the manufacturer. Sourcing new units directly from authorized channels is not possible. Buyers must verify the authenticity and condition of any available surplus stock carefully. Engineering teams should prioritize the transition to the designated replacement part number to ensure long-term supply chain stability and compliance with current manufacturing standards.

Single FETs, MOSFETs Selection Notes

Designers requiring this specific electrical profile should evaluate the successor model DMJ70H1D4SJ3. While pin-compatible, the updated device may exhibit different thermal or dynamic characteristics that require re-validation of the circuit design. Engineers must consult the latest datasheets for the replacement part to confirm suitability for existing system constraints before finalizing procurement plans.

Single FETs, MOSFETs Part Context

This device belongs to the DMJ series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series targets general-purpose power switching applications where efficiency and robustness are critical. The TO-251 package provides a compact solution for surface-mount assembly, balancing thermal dissipation capabilities with board space optimization for modern electronic equipment.

Single FETs, MOSFETs Replacement Considerations

The official replacement part number is DMJ70H1D4SJ3. Designers should review the updated specifications of this successor to ensure compatibility with existing system requirements before implementation.