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DMJ70H1D5SV3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CHANNEL 700V 5A TO251. Review the specifications below when checking this part for your BOM.
The DMJ70H1D5SV3 is an N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management. It features a 700V drain-source voltage rating and a maximum on-resistance of 1.5Ω at VGS=10V. The device supports a continuous drain current of 5.0A at +25°C case temperature and operates within a junction temperature range of -55°C to +150°C. Packaged in a TO-251 (Type HE1) housing with matte tin annealed terminals, it offers low input capacitance and optimized switching performance.
Verify component authenticity through authorized channels. Confirm the datasheet revision matches the delivered product batch. Ensure thermal management aligns with specified junction temperature limits during operation. Check compliance documentation for environmental regulations relevant to your deployment region.
Evaluate thermal resistance characteristics against system heat dissipation capabilities. Consider gate threshold voltage variations across the operating temperature range. Assess safe operating area constraints for pulsed load conditions. Verify package compatibility with existing PCB footprint designs.
This component belongs to Diodes Incorporated's discrete semiconductor portfolio, specifically within the N-channel MOSFET category. It utilizes silicon technology housed in a surface-mountable TO-251 package. The device targets general-purpose power switching applications requiring moderate current handling and high voltage tolerance.
The datasheet explicitly states this part is not recommended for new design and has no alternate part.
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