DMMT5551-7-F

DMMT5551-7-F

$0.37
  • Description:TRANS 2NPN 160V 200MA SOT-26
  • Series:-

SKU:86f59b9d0c51 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 160V 200MA SOT-26
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual) Matched Pair
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):160V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Power - Max:300mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6
  • Supplier Device Package:SOT-26
  • Grade:-
  • Qualification:-

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DMMT5551-7-F

Overview

The DMMT5551-7-F is a matched NPN small signal surface mount transistor manufactured by Diodes Incorporated. It features an epitaxial planar die construction and is housed in a SOT-26 package. The device provides intrinsically matched characteristics for the NPN pair, with a typical tolerance of 1% and a maximum of 2% for hFE, VCE(SAT), and VBE(SAT). Key electrical ratings include a collector-base voltage (VCBO) of 180 V, a collector-emitter voltage (VCEO) of 160 V, and a continuous collector current (IC) of 200 mA. The power dissipation is rated at 300 mW, and the gain-bandwidth product (fT) reaches up to 300 MHz.

Feature Summary

  • Intrinsically matched NPN pair built from adjacent dies on a single wafer
  • High matching precision with maximum tolerances of 2% for DC current gain and saturation voltages
  • Epitaxial planar die construction designed for low power amplification and switching applications

Applications

  • Low power amplification circuits
  • General purpose switching applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets RoHS compliance standards and check for green molding compound requirements if manufacturing date codes are relevant to the project specifications.

Selection Notes

Select this component when precise matching between two NPN transistors is required within a compact surface mount footprint. Ensure the design accommodates the 300 mW power dissipation limit and verify that the 160 V collector-emitter voltage rating aligns with the circuit's operational requirements.

Part Context

This part belongs to the DMMT5551 series, which includes complementary PNP types such as the DMMT5401. The series utilizes a SOT-26 case constructed from molded plastic with a UL 94V-0 flammability rating. The device is available in tape and reel packaging for automated assembly processes.

Replacement Considerations

Direct substitutes must maintain the SOT-26 package and matched NPN configuration. Verify that alternative components offer comparable hFE matching tolerances and similar breakdown voltage ratings to ensure circuit compatibility.

DMMT5551-7-FDMMT5551-7-F
$0.37
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