DMMT5551S-7-F

DMMT5551S-7-F

$0.37
  • Description:TRANS 2NPN 160V 200MA SOT-26
  • Series:-

SKU:8f852177fb07 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 160V 200MA SOT-26
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual) Matched Pair
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):160V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Power - Max:300mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6
  • Supplier Device Package:SOT-26
  • Grade:-
  • Qualification:-

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DMMT5551S-7-F

Overview

The DMMT5551S-7-F is a matched NPN small signal surface mount transistor manufactured by Diodes Incorporated. It features an epitaxial planar die construction and is housed in a SOT-26 package. The device provides intrinsically matched characteristics for the NPN pair, with a typical matched tolerance of 1% and a maximum of 2% for hFE, VCE(SAT), and VBE(SAT). Key electrical parameters include a collector-base voltage (VCBO) of 180 V, a collector-emitter voltage (VCEO) of 160 V, and a continuous collector current (IC) of 200 mA. Power dissipation is rated at 300 mW, with a thermal resistance (RθJA) of 417 °C/W. The gain-bandwidth product (fT) ranges from 100 MHz to 300 MHz.

Feature Summary

  • Intrinsically matched NPN pair built with adjacent dies from a single wafer
  • High collector-base breakdown voltage of 180 V
  • Low saturation voltages for efficient switching applications
  • Lead-free and RoHS compliant construction

Applications

  • Low power amplification circuits
  • General purpose switching applications

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm date codes and marking information (K4T) against official documentation. Ensure compliance with specific environmental requirements such as RoHS standards if applicable to the end application.

Selection Notes

Select this component when matched transistor performance is required within a compact SOT-26 footprint. Consider the 200 mA continuous current limit and 300 mW power dissipation capabilities during thermal design. Verify that the 160 V collector-emitter voltage meets the circuit's operating requirements.

Part Context

This part belongs to the DMMT5551 series of matched NPN transistors. It serves as the surface-mount variant of the DMMT5551, sharing identical electrical characteristics but distinguished by its specific marking code (K4T) and packaging configuration. It is designed to complement the PNP type DMMT5401.

Replacement Considerations

Direct substitutes must maintain the SOT-26 package, matched NPN configuration, and similar voltage/current ratings. Verify pinout compatibility and thermal resistance values before implementation.

DMMT5551S-7-FDMMT5551S-7-F
$0.37
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