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DMN100-7-F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 1.1A SC59-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN100-7-F
- Description：MOSFET N-CH 30V 1.1A SC59-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：240mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：150 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-59-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMN100-7-F
Single FETs, MOSFETs Overview
The DMN100-7-F is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SC-59-3 surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 4 A. Key electrical characteristics include a maximum on-resistance of 170 mOhms, a gate-source voltage rating of ±20 V, and a threshold voltage of 1 V. Additional parameters specify a gate charge of 5.5 nC, power dissipation of 500 mW, and switching times of 15 ns for both rise and fall. The component operates within a temperature range of -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- Single N-channel enhancement mode configuration
- Epitaxial planar silicon construction
- Surface-mount SMD/SMT installation style
Single FETs, MOSFETs Applications
Single FETs, MOSFETs Procurement Notes
Verify the current lifecycle status before procurement, as public records indicate this specific part number may be obsolete or subject to discontinuation by the manufacturer. Confirm availability through authorized distributors, as standard stock may not be maintained. Ensure that any substitute components meet the original electrical specifications and package dimensions required for the design.
Single FETs, MOSFETs Selection Notes
Select this component only if the application requires a 30 V N-channel MOSFET with a 4 A current capability in an SC-59-3 package. Evaluate the 170 mOhm on-resistance against thermal management requirements given the 500 mW power dissipation limit. Consider the obsolete status when designing new products to ensure long-term supply chain stability.
Single FETs, MOSFETs Part Context
This part belongs to the DMN100 series of N-channel MOSFETs from Diodes Incorporated. These devices are designed for general-purpose switching applications requiring low voltage operation. The series typically offers compact packaging solutions suitable for space-constrained printed circuit board layouts.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official manufacturer documentation for recommended cross-reference parts.
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