DMN1003UFDE-7

$0.18

Description：MOSFET BVDSS: 8V~24V U-DFN2020-6
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:db5bdcc43317 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

DMN1003UFDE-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V U-DFN2020-6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN1003UFDE-7

Description：MOSFET BVDSS: 8V~24V U-DFN2020-6
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：22A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：3mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：2551 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type E)
Package / Case：6-PowerUDFN

Single FETs, MOSFETs datasheet and documents for DMN1003UFDE-7

DMN1003UFDE-7

Single FETs, MOSFETs Overview

The DMN1003UFDE-7 is a 12V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package and offers a maximum drain-source breakdown voltage (BVDSS) of 12V. The device provides a typical static drain-source on-resistance (RDS(ON)) of 3mΩ at VGS = 4.5V with a continuous drain current (ID) of 22A, or 4mΩ at VGS = 2.5V with an ID of 19A. Key electrical parameters include a gate-source voltage (VGSS) rating of ±8V, a total power dissipation (PD) of 0.8W to 2.2W depending on mounting conditions, and a junction-to-ambient thermal resistance (RθJA) ranging from 54°C/W to 148.5°C/W.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
Features low gate threshold voltage to facilitate efficient drive requirements.
Incorporates ESD protected gate circuitry to enhance component reliability.

Single FETs, MOSFETs Applications

General-purpose interfacing switches
Power-management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm that the required RoHS compliance level matches the project specifications. Ensure the selected variant aligns with the intended thermal management strategy given the available RθJA values. Cross-reference the date code key to validate manufacturing timelines if necessary.

Single FETs, MOSFETs Selection Notes

Select this component when a 12V N-channel MOSFET with low on-resistance is required in a compact U-DFN2020-6 footprint. Evaluate the thermal resistance characteristics based on the specific PCB copper area and mounting configuration. Consider the gate charge and threshold voltage for compatibility with the driving logic levels in the target application design.

Single FETs, MOSFETs Part Context

This part belongs to the DMN1003 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in a U-DFN2020-6 (Type E) surface-mount package. The device is designed for general-purpose switching and power management tasks requiring high efficiency.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer documentation for verified equivalent parts. Do not substitute without confirming pinout, voltage ratings, and thermal characteristics match the original design requirements.