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DMN1004UFDF-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 12V 15A 6UDFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN1004UFDF-13
- Description：MOSFET N-CH 12V 15A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：4.8mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：47 nC @ 10 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：2385 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6
- Package / Case：6-UDFN Exposed Pad
Single FETs, MOSFETs datasheet and documents for DMN1004UFDF-13
Single FETs, MOSFETs Overview
The DMN1004UFDF-13 is a 12V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 12V and a continuous drain current (ID) of 15A at +25°C. The device exhibits a low on-resistance (RDS(ON)) of 4.8mΩ at VGS = 4.5V and 7.0mΩ at VGS = 2.5V. It operates within a temperature range of -55°C to +150°C, housed in a U-DFN2020-6 package.
Single FETs, MOSFETs Feature Summary
- Designed for high efficiency power management applications with minimized on-state resistance and superior switching performance.
- Features a 0.6mm profile and a compact PCB footprint of 4mm², suitable for low-profile designs.
- Includes an ESD protected gate structure for enhanced reliability.
Single FETs, MOSFETs Applications
- General purpose interfacing switch
- Power management functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets RoHS 3 compliance requirements and ensure compatibility with the specified U-DFN2020-6 surface mount assembly process.
Single FETs, MOSFETs Selection Notes
Select this component when a low-voltage, high-current N-channel MOSFET is required for space-constrained designs. The low gate threshold voltage facilitates efficient drive from standard logic levels. Ensure thermal management accounts for the junction-to-ambient resistance characteristics under the intended operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to the DMN1004 series of advanced N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is packaged in the U-DFN2020-6 form factor. The product is designed to balance low conduction losses with fast switching capabilities for modern electronic systems.
Single FETs, MOSFETs Replacement Considerations
Consult official datasheets for cross-reference data. Verify pinout compatibility and electrical parameters against potential substitutes before implementation.
Single FETs, MOSFETs FAQ
What is the maximum pulsed drain current capability?
The maximum pulsed drain current (IDM) is rated at 70A, based on a 380µs pulse duration with a 1% duty cycle.
Is the device qualified for automotive applications?
Standard versions are not explicitly qualified for automotive use. For automotive applications requiring AEC-Q100/101/200 qualification and PPAP capability, refer to the related automotive grade parts with the 'Q-suffix'.
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