DMN1004UFV-7

Single FETs, MOSFETs Overview

The DMN1004UFV-7 is a 12V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 (Type UX) package and silicon technology. Key electrical parameters include a drain-source breakdown voltage of 12V, a continuous drain current of 70A at +25°C case temperature, and a maximum on-resistance of 3.8mΩ at VGS=4.5V. The device features an operating temperature range from -55°C to +150°C, a total power dissipation of 0.9W in steady state, and a thermal resistance junction-to-ambient of 134°C/W.

Single FETs, MOSFETs Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
• Small form factor thermally efficient package enables higher density end products.
• Occupies just 33% of the board area occupied by SO-8 packages.
• Features an ESD protected gate.

Single FETs, MOSFETs Applications

• Power Management Functions
• DC-DC Converters
• Battery

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. The DMN1004UFV-7 designation corresponds to a tape and reel configuration with a factory pack quantity of 2,000 units. Confirm that the component meets RoHS compliance requirements and ensure the correct datasheet revision is referenced during design-in to avoid discrepancies in mechanical or electrical specifications.

Single FETs, MOSFETs Selection Notes

Select this component when space constraints are critical, as the PowerDI3333-8 package reduces board area compared to traditional SO-8 footprints. Ensure the application requires a 12V rating and can accommodate the specified thermal characteristics. Verify that the gate drive voltage aligns with the low RDS(ON) thresholds provided in the datasheet for optimal conduction losses.

Single FETs, MOSFETs Part Context

This part belongs to the DMN1004UFV series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on high-efficiency power management solutions utilizing silicon technology. The specific model integrates advanced packaging techniques to improve thermal performance and reduce physical footprint within electronic circuits.

Single FETs, MOSFETs Replacement Considerations

DMN1004UFV-13 serves as a direct substitute with identical electrical characteristics but differs in packaging quantity, supplied in reels of 3,000 units instead of 2,000.