DMN1008UFDF-13

Single FETs, MOSFETs Overview

The DMN1008UFDF-13 is a 12V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 12V and a low on-resistance (RDS(ON)) of 8mΩ at VGS = 4.5V, supporting a continuous drain current (ID) of 12.2A at +25°C. The device utilizes a U-DFN2020-6 package with a 0.6mm profile and a PCB footprint of 4mm². It operates within a temperature range of -55°C to +150°C and is fully RoHS compliant.

Single FETs, MOSFETs Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
• Features a 0.6mm profile ideal for low-profile applications with a compact 4mm² PCB footprint.
• Qualified to JEDEC standards for high reliability and available in an automotive-compliant variant.

Single FETs, MOSFETs Applications

• Battery-management applications
• Power-management functions
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing. The DMN1008UFDF-13 designation indicates a reel size of 13 inches with a packing quantity of 10,000 units. Confirm that the required packaging matches the project needs, as alternative suffixes such as -7 exist for different reel sizes and quantities.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 12V rating with minimal conduction losses. Ensure the gate drive voltage meets the requirements for optimal RDS(ON), specifically noting performance at 4.5V, 3.0V, and 2.5V. Verify thermal management capabilities against the specified junction-to-ambient resistance values for the intended mounting conditions.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for general-purpose switching applications where low on-resistance and fast switching are critical. The product line includes variants optimized for different voltage ratings and package types to suit various power management architectures.

Single FETs, MOSFETs Replacement Considerations

An automotive-compliant version of this component is available under the separate datasheet for part number DMN1008UFDFQ. Engineers requiring AEC-Q qualification should verify if this specific variant meets their system's reliability standards instead of using the standard commercial grade part.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the DMN1008UFDF?

The maximum pulsed drain current (IDM) is 60A, based on a 380μs pulse duration with a duty cycle of 1%.

Is the DMN1008UFDF suitable for high-reliability environments?

Yes, the part is qualified to JEDEC standards for high reliability. An automotive-compliant version (DMN1008UFDFQ) is also available for stricter requirements.