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DMN1016UCB6-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 12V 5.5A U-WLB1510-6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN1016UCB6-7
- Description：MOSFET N-CH 12V 5.5A U-WLB1510-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：5.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：20mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.2 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：423 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：920mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-WLB1510-6
- Package / Case：6-UFBGA, WLBGA
Single FETs, MOSFETs datasheet and documents for DMN1016UCB6-7
Single FETs, MOSFETs Overview
The DMN1016UCB6-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 12 V drain-source breakdown voltage and an 8 V gate-source voltage rating. The device supports a continuous drain current of 30 A with a maximum on-resistance of 4.5 mΩ. It operates within a temperature range of -55°C to +150°C and utilizes the U-WLB1012-6 package.
Single FETs, MOSFETs Feature Summary
- Single N-channel enhancement mode configuration
- Low on-resistance for efficient power switching
- High current handling capability
- Automotive-grade reliability
Single FETs, MOSFETs Applications
- Automotive power management systems
- Industrial load switching
- High-efficiency DC-DC converter output stages
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix and package variant against the official datasheet to ensure compatibility with design requirements. Confirm RoHS compliance and automotive qualification status through manufacturer documentation before integration into production schedules.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low conduction losses at high currents. Ensure thermal management strategies account for the specified power dissipation limits. Validate gate drive voltages against the 8 V maximum rating to prevent device damage during operation.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel MOSFETs from Diodes Incorporated, designed for high-efficiency power management in automotive and industrial environments. The U-WLB1012-6 package provides compact footprint solutions suitable for space-constrained PCB layouts.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution lists for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering equivalent parts from other manufacturers.
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