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DMN1017UCP3-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 12V 7.5A X3DSN1010-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN1017UCP3-7
- Description：MOSFET N-CH 12V 7.5A X3DSN1010-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 3.3V
- Rds On (Max) @ Id, Vgs：17mOhm @ 5A, 3.3V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 3.3 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1503 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：1.47W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X3-DSN1010-3
- Package / Case：3-XDFN
Single FETs, MOSFETs datasheet and documents for DMN1017UCP3-7
Single FETs, MOSFETs Overview
The DMN1017UCP3-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, utilizing TR-MOS technology to minimize on-state losses. It features a Chip-Scale Package (CSP) with a footprint of 1.0mm x 1.0mm and a height of 0.29mm. Key electrical parameters include a drain-source voltage (VDSS) of 12V, a typical static drain-source on-resistance (RDS(ON)) of 14.1mΩ at VGS = 3.3V, and a continuous drain current (ID) of 7.5A at TA = +25°C. The device has a total gate charge (Qg) of 10.5nC.
Single FETs, MOSFETs Feature Summary
- TR-MOS Technology for minimized on-state losses
- Chip-Scale Package (CSP) for high power density
- Low profile design with minimal thermal impedance
Single FETs, MOSFETs Applications
- DC-DC Converters
- Battery Management Systems
- Load Switches
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration as documented in the manufacturer's datasheet. Confirm that the component meets all applicable RoHS directives and environmental compliance standards required for your manufacturing process before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring low on-resistance within a highly compact form factor. Ensure the application operates within the specified 12V drain-source voltage limit and consider the thermal resistance characteristics for adequate heat dissipation in dense PCB layouts.
Single FETs, MOSFETs Part Context
This part belongs to Diodes Incorporated's portfolio of silicon MOSFETs designed for high-efficiency power transfer. It utilizes advanced chip-scale packaging to reduce footprint while maintaining robust electrical performance suitable for modern portable and automotive electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers without verifying pinout, electrical ratings, and package dimensions.
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