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DMN1019USN-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 12V 9.3A SC59. Review the specifications below when checking this part for your BOM.
The DMN1019USN-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 12V and a continuous drain current of 9.3A at 25°C. The device exhibits a typical on-resistance of 7mΩ at VGS=4.5V, with a gate threshold voltage ranging from 0.35V to 0.8V. Total gate charge is specified as 27.3nC at VGS=4.5V and 50.6nC at VGS=8V. Thermal characteristics include a junction-to-case resistance of 18°C/W and an operating temperature range from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging details. The -13 suffix indicates a tape and reel quantity of 10,000 units in SC59 packaging. Confirm RoHS compliance and halogen-free status requirements match project specifications before procurement.
Select this component for low-voltage switching applications requiring minimal conduction losses. Evaluate thermal dissipation capabilities based on PCB copper coverage and ambient conditions. Ensure gate drive voltages align with the specified RDS(ON) test conditions for optimal performance.
This part belongs to the DMN1019 series of N-channel MOSFETs designed for compact surface-mount implementations. It utilizes the SC59 package to provide a small footprint while maintaining robust electrical characteristics suitable for portable electronics and industrial control systems.
Consult official substitution lists for verified alternatives. Cross-reference pinout configurations and electrical parameters carefully when considering equivalent components from other manufacturers.
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