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DMN1054UCB4-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 8V 2.7A X1-WLB0808-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN1054UCB4-7
- Description：MOSFET N-CH 8V 2.7A X1-WLB0808-4
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：8 V
- Current - Continuous Drain (Id) @ 25°C：2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
- Rds On (Max) @ Id, Vgs：42mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 4.5 V
- Vgs (Max)：±5V
- Input Capacitance (Ciss) (Max) @ Vds：908 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：740mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X1-WLB0808-4
- Package / Case：4-XFBGA, WLBGA
Single FETs, MOSFETs datasheet and documents for DMN1054UCB4-7
Single FETs, MOSFETs Overview
The DMN1054UCB4-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, utilizing Trench-CSP technology. It features a drain-source voltage (VDSS) of 8V and a typical on-resistance (RDS(ON)) of 35mΩ at VGS=4.5V. The device supports a continuous drain current (ID) of 4.0A at +25°C and has a total gate charge (Qg) of 9.6nC. It operates within a temperature range of -55°C to +150°C and is housed in the X1-WLB0808-4 package.
Single FETs, MOSFETs Feature Summary
- Trench-CSP technology designed for minimal on-state losses and ultra-fast switching capabilities
- Low profile CSP footprint measuring 0.8mm x 0.8mm with a height of 0.375mm
- Low turn-on potential characterized by a typical gate threshold voltage of 0.6V
Single FETs, MOSFETs Applications
- DC-DC Converters
- Battery Management Systems
- Load Switches
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm compliance requirements such as RoHS and halogen-free status against project specifications. Ensure thermal management designs account for the junction-to-ambient resistance values provided in the datasheet for the target PCB layout.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high-efficiency power transfer in compact spaces. The low RDS(ON) per footprint area makes it suitable for dense layouts. Verify that the 8V breakdown voltage aligns with system rail voltages. Consider the 0.6V typical threshold voltage for compatibility with low-voltage logic drivers.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes Chip-Scale Package (CSP) technology to maximize power density. The product line focuses on minimizing on-state losses while maintaining fast switching speeds for modern power management applications.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer documentation for verified equivalent parts. Cross-referencing should prioritize matching VDSS, ID, RDS(ON), and package dimensions (X1-WLB0808-4). Ensure any substitute maintains compatible thermal characteristics and electrical thresholds.
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