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DMN10H120SE-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 3.6A SOT223. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN10H120SE-13
- Description：MOSFET N-CH 100V 3.6A SOT223
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：110mOhm @ 3.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：549 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223-3
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for DMN10H120SE-13
Single FETs, MOSFETs Overview
The DMN10H120SE-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 100V and a continuous drain current of 3.6A at 25°C. The device offers a low on-state resistance of 110mΩ at VGS=10V and 122mΩ at VGS=6.0V. Packaged in an SOT-223 case, it supports a junction temperature range from -55°C to +150°C with a total power dissipation of 1.3W (ambient) or 2.1W (case).
Single FETs, MOSFETs Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance.
- Utilizes advanced silicon technology for high-efficiency power management applications.
- Compliant with RoHS standards and free from halogen and antimony.
Single FETs, MOSFETs Applications
- DC-DC Converters
- Power Management Functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per reel. Confirm that the component meets the required environmental specifications, including compliance with EU Directives 2002/95/EC and 2011/65/EU regarding lead-free materials. Ensure the selected package variant matches the thermal requirements of the target application design.
Single FETs, MOSFETs Selection Notes
Select this component for circuits requiring a 100V rating with moderate current handling capabilities up to 3.6A. The SOT-223 package provides a balance between thermal performance and board space efficiency. Consider the gate threshold voltage characteristics when designing drive circuits to ensure reliable turn-on at the intended control logic levels.
Single FETs, MOSFETs Part Context
This part belongs to the DMN10 series of N-channel MOSFETs from Diodes Incorporated. These devices are engineered for general-purpose switching applications where low conduction losses and fast switching speeds are critical. The series utilizes standard surface-mount technologies compatible with automated assembly processes.
Single FETs, MOSFETs Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
Single FETs, MOSFETs FAQ
What is the maximum pulsed drain current for the DMN10H120SE?
The maximum pulsed drain current is 16A, specified under conditions of a 10μs pulse duration and a duty cycle less than or equal to 1%.
Does the device include an internal body diode?
Yes, the datasheet specifies a Maximum Body Diode Continuous Current (IS) of 2.5A and provides electrical characteristics for the Diode Forward Voltage (VSD).
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