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DMN10H120SFG-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 3.8A PWRDI3333. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN10H120SFG-7
- Description：MOSFET N-CH 100V 3.8A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：110mOhm @ 3.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：549 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
Single FETs, MOSFETs datasheet and documents for DMN10H120SFG-7
Single FETs, MOSFETs Overview
The DMN10H120SFG-7 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management. It features a maximum drain-source voltage of 100V and a continuous drain current of 3.8A at 25°C (VGS=10V). The device offers a low on-state resistance of 110mΩ max at VGS=10V and 122mΩ max at VGS=6V. Packaged in the thermally efficient PowerDI3333-8 surface-mount format, it supports junction temperatures up to 150°C and meets AEC-Q101 standards.
Single FETs, MOSFETs Feature Summary
- Minimizes on-state losses through low RDS(ON) while maintaining superior switching performance.
- Small form factor package enables higher density end products by occupying only 33% of the board area compared to SO-8.
- Qualified to AEC-Q101 standards for high reliability applications.
Single FETs, MOSFETs Applications
- Power Management Functions
- DC-DC Converters
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The -7 suffix indicates a standard tape and reel quantity of 2000 units. Confirm compliance with RoHS and halogen-free requirements as specified in the manufacturer's quality definitions before procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a compact N-channel MOSFET with 100V rating is required for space-constrained designs. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) performance. Consider thermal dissipation capabilities relative to the ambient temperature and PCB copper layout constraints.
Single FETs, MOSFETs Part Context
This part belongs to the DMN10 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated under the PowerDI trademark. The series focuses on providing high-performance switching solutions in small surface-mount packages suitable for modern electronic equipment requiring reduced footprint.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution lists for verified alternatives. Cross-referencing requires matching key parameters such as V(BR)DSS, RDS(ON), package type, and pin configuration to ensure functional compatibility without design modification.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
