DMN10H170SFGQ-13

$0.24

Description：MOSFET N-CH 100V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:5d853e8bbf68 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN10H170SFGQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V PWRDI3333. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN10H170SFGQ-13

Description：MOSFET N-CH 100V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：2.9A (Ta), 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：122mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：870.7 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：940mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for DMN10H170SFGQ-13

DMN10H170SFGQ-13

Single FETs, MOSFETs Overview

The DMN10H170SFGQ-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (BVDSS) of 100V and a continuous drain current (ID) of 2.9A at TA=+25°C. The maximum on-resistance (RDS(ON)) is 122mΩ at VGS=10V and 133mΩ at VGS=4.5V. Gate-source voltage (VGSS) is rated at ±20V. Total gate charge (Qg) is 14.9nC at VGS=10V. Operating temperature range spans -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Qualified to AEC-Q101 standards for automotive high reliability applications
Supports 100% unclamped inductive switching testing in production
PPAP capable for automotive supply chain requirements
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Single FETs, MOSFETs Applications

Motor Control
Power Management Functions
DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required quantity: DMN10H170SFGQ-7 indicates a 2000-unit tape and reel, while DMN10H170SFGQ-13 indicates a 3000-unit tape and reel. Confirm that the component meets AEC-Q101 qualification and PPAP capability requirements if intended for automotive assembly lines. Ensure the PowerDI3333-8 package dimensions align with the target PCB footprint layout.

Single FETs, MOSFETs Selection Notes

Select this component when a compact, thermally efficient surface-mount solution is required for 100V switching applications. The small form factor occupies only 33% of the board area compared to SO-8 packages. Consider the RDS(ON) specifications at both 4.5V and 10V gate drive voltages to ensure compatibility with the control circuit logic levels and minimize conduction losses.

Single FETs, MOSFETs Part Context

This device belongs to the DMN10 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology within a molded plastic case classified as UL 94V-0 flammability rating. The terminals are finished with matte tin annealed over a copper leadframe, ensuring solderability per MIL-STD-202 Method 208.