DMN10H170SK3Q-13

$0.72

Description：MOSFET N-CH 100V 12A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:50f362f2f3ac Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN10H170SK3Q-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 12A TO252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN10H170SK3Q-13

Description：MOSFET N-CH 100V 12A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：140mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1167 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：42W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for DMN10H170SK3Q-13

DMN10H170SK3Q-13

Single FETs, MOSFETs Overview

The DMN10H170SK3Q-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO252 (DPAK) package and operates with a drain-source voltage of 100V. The device provides a maximum on-resistance of 140mΩ at VGS=10V and 160mΩ at VGS=4.5V, supporting continuous drain currents of 12A at TC=+25°C and 7.5A at TC=+100°C. It includes an internal body diode with a forward voltage of 1.0V max. The component is AEC-Q101 qualified for automotive applications.

Single FETs, MOSFETs Feature Summary

Low on-state resistance to minimize conduction losses in power management circuits
Optimized switching performance with low input capacitance for high-efficiency operation
Automotive qualification compliant with AEC-Q101 standards and PPAP capable

Single FETs, MOSFETs Applications

DC-DC converters
Power-management functions
Analog switches

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the required automotive quality documentation, including PPAP capability, aligns with your supply chain requirements. Ensure the TO252 package dimensions match your PCB footprint design guidelines before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing 100V systems requiring robust current handling up to 12A at case temperature. Consider the thermal resistance characteristics if operating near the maximum junction temperature limit. Verify gate drive voltage compatibility, as on-resistance varies significantly between 4.5V and 10V drive levels.

Single FETs, MOSFETs Part Context

This part belongs to the DMN10 series of N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology housed in a molded plastic TO252 package. The device is designed for surface mount installation and meets RoHS directives. It is manufactured in IATF 16949 certified facilities to support automotive industry standards.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Do not assume pin-compatible alternatives without verifying electrical parameters and thermal characteristics against the original datasheet specifications.