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DMN10H170SVT-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 2.6A TSOT26. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN10H170SVT-13
- Description：MOSFET N-CH 100V 2.6A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：160mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1167 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
Single FETs, MOSFETs datasheet and documents for DMN10H170SVT-13
Single FETs, MOSFETs Overview
The DMN10H170SVT-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 100V and a continuous drain current of 2.6A at +25°C. The device exhibits a maximum on-resistance of 160mΩ at VGS=10V and 200mΩ at VGS=4.5V. Total gate charge is 9.7nC at VGS=10V. It operates within a junction temperature range of -55°C to +150°C and utilizes a TSOT26 surface-mount package.
Single FETs, MOSFETs Feature Summary
- Designed for high-efficiency power management applications with minimized on-state resistance
- Maintains superior switching performance alongside low input capacitance
- Features low gate threshold voltage for efficient drive requirements
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Single FETs, MOSFETs Applications
- Power Management Functions
- Battery Operated Systems
- Solid-State Relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets the required environmental standards, specifically RoHS compliance and halogen-free status, prior to integration into the final assembly process.
Single FETs, MOSFETs Selection Notes
Select this component when a single N-channel MOSFET with 100V breakdown capability is required in a compact TSOT26 footprint. Ensure the application drive voltage supports the specified RDS(ON) thresholds at either 4.5V or 10V. Verify thermal constraints align with the provided junction-to-ambient resistance values for the intended PCB layout.
Single FETs, MOSFETs Part Context
This part belongs to the DMN10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to balance low conduction losses with fast switching speeds. The device is housed in a TSOT26 case utilizing a molded plastic green molding compound with a UL flammability rating of 94V-0.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other Diodes Incorporated parts sharing the DMN10 prefix for potential pin-compatible alternatives. Verify that any substitute maintains identical package dimensions and electrical ratings before implementation.
Single FETs, MOSFETs FAQ
What is the maximum pulsed drain current for this device?
The maximum pulsed drain current (IDM) is 11.2A, based on a 10μs pulse duration with a duty cycle less than or equal to 1%.
Does the DMN10H170SVT-13 support reverse recovery characteristics?
Yes, the datasheet specifies a typical reverse recovery time (trr) of 30ns and a reverse recovery charge (Qrr) of 35nC under specific test conditions.
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