DMN10H220LDV-13

Overview

The DMN10H220LDV is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 100 V and a gate-source voltage (VGSS) rating of ±20 V. The device provides a continuous drain current (ID) of 10.5 A at a case temperature of +25°C, with a pulsed drain current (IDM) capability of 42 A. Static drain-source on-resistance (RDS(ON)) is specified as a maximum of 222 mΩ at VGS = 10 V and ID = 2 A, and 270 mΩ at VGS = 4.5 V and ID = 1 A. Total gate charge (Qg) reaches 6.7 nC at VGS = 10 V. The component operates within a junction temperature range of -55°C to +150°C and utilizes the PowerDI3333-8 surface-mount package.

Feature Summary

• Dual configuration integrating two independent N-channel enhancement mode MOSFETs in a single compact package.
• Optimized for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
• Manufactured using lead-free materials that are fully RoHS compliant, halogen-free, and antimony-free.

Applications

• Load Switch
• High-efficiency power management circuits

Procurement Notes

Verify the specific ordering suffix when sourcing components. The datasheet lists both DMN10H220LDV-7 and DMN10H220LDV-13 variants. Confirm that the received part matches the required packaging quantity and reel specifications for your assembly line. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling.

Selection Notes

Select this component for designs requiring a dual N-channel topology within a small footprint. Evaluate thermal constraints carefully, as total power dissipation is limited to 1.8 W at ambient temperature. Verify that the gate drive voltage meets the minimum threshold for optimal RDS(ON) performance. Consider the 100 V breakdown voltage limit when designing for transient voltage spikes.

Part Context

This device belongs to the DMN10 series of dual MOSFETs from Diodes Incorporated. It shares the PowerDI3333-8 package form factor with other members of the family but differs in electrical ratings such as on-resistance and current capacity. The dual configuration allows for space-saving implementations compared to using discrete single-channel devices.

Replacement Considerations

Direct substitutes include other DMN10 series parts like DMN10H099SFG-7 or DMN10H170SFDE-13, provided they fit the PowerDI3333-8 footprint. Verify pinout compatibility and ensure the replacement's RDS(ON) and current ratings meet or exceed the original design requirements.

FAQ

What is the maximum avalanche energy rating for this device?

The maximum avalanche energy (EAS) is rated at 1.1 mJ based on a low-frequency inductance of 0.1 mH.

Does the DMN10H220LDV support unclamped inductive switching?

Yes, the datasheet confirms that 100% of production units undergo Unclamped Inductive Switching (UIS) testing.

What is the typical reverse recovery charge of the body diode?

The typical body diode reverse recovery charge (QRR) is 11 nC, measured at a source current of 1.1 A and a rate of change of current of 100 A/μs.