DMN10H220LFVW-7

Single FETs, MOSFETs Overview

The DMN10H220LFVW-7 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 packaging and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a maximum drain-source voltage (BVDSS) of 100V, a continuous drain current (ID) of 11A at TC=+25°C, and a static drain-source on-resistance (RDS(ON)) of 222mΩ at VGS=10V. The device features a gate threshold voltage (VGS(TH)) between 1V and 2.5V, total gate charge (Qg) of 6.7nC at VGS=10V, and a maximum power dissipation (PD) of 2.4W at TA=+25°C.

Single FETs, MOSFETs Feature Summary

• Designed for high-efficiency power management applications with minimized on-state resistance while maintaining superior switching performance.
• Features wettable flanks to facilitate improved optical inspections during manufacturing processes.
• Compliant with RoHS directives and fully lead-free, halogen-free, and antimony-free.
• Undergoes 100% unclamped inductive switch (UIS) testing in production.

Single FETs, MOSFETs Applications

• Load Switch
• High-efficiency power management

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The standard tape and reel quantity is 2,000 units. Confirm compliance requirements such as AEC-Q100/101 or IATF 16949 certification directly with the manufacturer if automotive specifications are required. Ensure the component matches the exact datasheet revision for accurate thermal and electrical characteristics.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V rating and low RDS(ON) are required in a compact SMD footprint. Consider the 222mΩ resistance at VGS=10V for efficiency calculations. Evaluate the 11A continuous current capability against thermal constraints. Verify that the 2.4W power dissipation rating aligns with the system's ambient temperature and PCB copper area for adequate heat sinking.

Single FETs, MOSFETs Part Context

This part belongs to the DMN10 series of N-channel MOSFETs from Diodes Incorporated. It is housed in the PowerDI3333-8 package, which provides a small form factor suitable for space-constrained designs. The series focuses on balancing low conduction losses with fast switching speeds for modern power electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for verified equivalents. Cross-referencing requires matching BVDSS, ID, RDS(ON), and package dimensions. Verify pinout compatibility and thermal resistance values before implementation.

Single FETs, MOSFETs FAQ

Is the DMN10H220LFVW-7 qualified for automotive applications?

Standard versions are not explicitly listed as AEC-Q100/101 qualified. Automotive-specific parts requiring change control and IATF 16949 manufacturing must be requested directly from Diodes Incorporated representatives.

What is the maximum operating junction temperature?

The maximum operating and storage temperature range extends up to +150°C.