DMN2004DWK-7

$0.52

Description：MOSFET 2N-CH 20V 0.54A SOT363
Series：-

SKU:2961ffed68bd Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 0.54A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：540mA
Rds On (Max) @ Id, Vgs：550mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：150pF @ 16V
Power - Max：200mW
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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DMN2004DWK-7

Overview

The DMN2004DWK-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a continuous drain current (ID) of 540mA at +25°C. The device exhibits a low static drain-source on-resistance (RDS(ON)) of 0.55Ω maximum at VGS = 4.5V and ID = 540mA. Total power dissipation is rated at 200mW, with an operating temperature range from -55°C to +150°C. The component utilizes an SOT363 surface-mount package.

Feature Summary

Dual N-channel configuration for space-efficient circuit design
Low on-resistance optimized for high-efficiency power management
Fast switching speed with low input capacitance
Qualified to AEC-Q101 standards for automotive reliability

Applications

Load switch applications
High-efficiency power management circuits

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging format containing 3,000 units per reel. Confirm that the standard commercial version matches the required application environment, noting that an automotive-compliant variant exists under a separate datasheet designation. Ensure compliance with RoHS directives and moisture sensitivity level requirements during handling.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching tasks. The SOT363 package provides a small footprint suitable for dense PCB layouts. Evaluate the thermal resistance of 625°C/W against the expected ambient temperature and duty cycle to ensure junction temperatures remain within the specified -55°C to +150°C operational range.

Part Context

This part belongs to the DMN2004 series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching performance. The DMN2004DWK-7 represents the standard commercial grade packaged in SOT363, distinct from the automotive-grade DMN2004DWKQ variant.