ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
DMN2005UFG-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 18.1A PWRDI3333. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2005UFG-7
- Description：MOSFET N-CH 20V 18.1A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：18.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：4.6mOhm @ 13.5A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：164 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：6495 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.05W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
Single FETs, MOSFETs datasheet and documents for DMN2005UFG-7
Single FETs, MOSFETs Overview
The DMN2005UFG-7 is a single N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a drain-source voltage of 20V and a maximum continuous drain current of 50A at TC=+25°C. The static drain-source on-resistance is 4.6mΩ at VGS=4.5V and 8.7mΩ at VGS=2.5V, both measured at ID=13.5A. Total gate charge is 68.8nC at VGS=4.5V and 164nC at VGS=10V. Operating temperature range spans -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low RDS(ON) minimizes on-state losses for high-efficiency power management
- Small form factor thermally efficient package enables higher density end products
- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
- Qualified to AEC-Q101 Standards for High Reliability
Single FETs, MOSFETs Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix matches the required packaging quantity. The DMN2005UFG-7 variant utilizes a tape and reel format with a standard quantity of 2,000 units per reel. Confirm that the component meets all applicable RoHS directives and environmental compliance standards relevant to your manufacturing region before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a compact footprint is critical, as it occupies significantly less board area than traditional SO-8 packages. Ensure the application requires a 20V rating and can accommodate the thermal characteristics provided. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.
Single FETs, MOSFETs Part Context
This device belongs to the DMN2005 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It is designed specifically to minimize on-state resistance while maintaining superior switching performance. The part is housed in the PowerDI3333-8 case, which provides a green molding compound and UL flammability classification rating of 94V-0.
Single FETs, MOSFETs Replacement Considerations
The automotive-compliant version DMN2005UFGQ is available under a separate datasheet. Other parts within the DMN2005 series may offer different electrical characteristics or packaging options.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
