DMN2008LFU-7

Overview

The DMN2008LFU-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2030-6 (Type B) surface-mount package. It features a drain-source voltage rating of 20V and a maximum continuous drain current of 14.5A at +25°C. The device exhibits low on-state resistance, with RDS(ON) values ranging from 5.4mΩ at VGS=4.5V to 9.6mΩ at VGS=2.5V. Key electrical parameters include a gate threshold voltage of 0.5V to 1.5V, total gate charge of 18.7nC at VGS=4.5V, and input capacitance of 1,418pF. Thermal characteristics specify a junction-to-ambient thermal resistance of 123°C/W and an operating temperature range of -55°C to +150°C.

Feature Summary

• Dual configuration integrating two independent N-channel enhancement mode MOSFETs within a single compact footprint.
• Optimized for high efficiency power management through minimized on-state resistance while maintaining superior switching performance.
• Incorporates integrated ESD protection diodes on both gates to safeguard against electrostatic discharge events.

Applications

• Power Management Functions
• Battery Pack Protection
• Load Switching

Procurement Notes

Verify the specific ordering suffix when purchasing. The DMN2008LFU-7 variant utilizes a 3,000-unit tape and reel packaging format. Confirm that the component meets RoHS 3 compliance standards and is halogen-free if required by your manufacturing specifications. Cross-reference the manufacturer's latest datasheet revision to ensure alignment with current mechanical and electrical tolerances before finalizing procurement orders.

Selection Notes

Select this component for applications requiring dual-channel control in space-constrained designs. Ensure the gate drive voltage aligns with the specified RDS(ON) performance curves, as resistance increases significantly below 4.5V. Evaluate the thermal resistance requirements based on the intended PCB copper area, as the junction-to-ambient rating depends heavily on the mounting substrate dimensions and copper weight.

Part Context

This part belongs to the DMN2008LFU series of dual N-channel MOSFETs manufactured by Diodes Incorporated under the DiodesZetex brand. It shares the same internal die and functional architecture as the DMN2008LFU-13, differing only in the standard reel quantity provided for automated assembly processes. Both variants utilize the identical U-DFN2030-6 Type B case outline.

Replacement Considerations

The DMN2008LFU-13 serves as a direct equivalent replacement, offering identical electrical and mechanical specifications with a different tape and reel quantity. Verify pinout compatibility and package dimensions when substituting with other dual MOSFETs from different manufacturers.

FAQ

What is the maximum continuous drain current for the DMN2008LFU-7?

The maximum continuous drain current is 14.5A at an ambient temperature of +25°C and decreases to 11.5A at +70°C.

Does the DMN2008LFU-7 include built-in protection features?

Yes, the device includes integrated ESD protected gates for each of the two channels to prevent damage from electrostatic discharge.

What is the typical gate threshold voltage range?

The gate threshold voltage (VGS(TH)) ranges from a minimum of 0.5V to a maximum of 1.5V when tested at ID = 250μA.